PUBLICATIONS

  1. Renqiang Zhu, Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “GaN Quasi-vertical Trench MOSFETs Grown on Si Substrate with ON-current Exceeding 1 A”, Applied Physics Express, vol. 15, no. 12, pp.121004, 2022. DOI: 10.35848/1882-0786/aca26e.

  2. Yu Zhang, Lihua Xu, Yitian Gu, Haowen Guo, Huaxing Jiang, Kei May Lau, and Xinbo Zou, “Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer”, IEEE Journal of the Electron Devices Society, vol. 10, pp.540-546, 2022. DOI: 10.1109/JEDS.2022.3189819.

  3. Renqiang Zhu, Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “Vertical GaN Trench MOSFETs with Step-graded Channel Doping”, Applied Physics Letters, vol. 120, no. 24, pp.242104, 2022. DOI: 10.1063/5.0088251.

  4. Renqiang Zhu, Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric”, IEEE Electron Device Letters, vol. 43, no. 3, pp.346-349, 2022. DOI: 10.1109/LED.2022.3146276.

  5. Renqiang Zhu, Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “Effects of p-GaN Body Doping Concentration on the ON-state Performance of Vertical GaN Trench MOSFETs”, IEEE Electron Device Letters, vol. 42, no. 7, pp.970-973, 2021. DOI: 10.1109/LED.2021.3080260.

  6. Qifeng Lyu, Huaxing Jiang, and Kei May Lau, “Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform”, Optics Express, vol. 29, no. 6, pp.8358-8364, 2021. DOI: 10.1364/OE.418843. (Editors' Pick, Featured on SemiconductorToday)

  7. Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, Chak Wah Tang, and Kei May Lau, “Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors”, Semiconductor Science and Technology, vol. 36, no. 3, p. 034001, 2021. DOI: 10.1088/1361-6641/abd61b.

  8. Huaxing Jiang, Qifeng Lyu, Renqiang Zhu, Peng Xiang, Kai Cheng, and Kei May Lau, “1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current”, IEEE Transactions on Electron Devices, vol. 68, no. 2, pp. 653-657, 2021. DOI: 10.1109/TED.2020.3043213.

  9. Haoxun Luo, Huaxing Jiang, Zimin Chen, Yanli Pei, Qian Feng, Hong Zhou, Xing Lu, Kei May Lau, and Gang Wang, “Leakage Current Reduction in beta-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment”, IEEE Electron Device Letters, vol. 41, no. 9, pp. 1312-1315, 2020. DOI: 10.1109/LED.2020.3013918.

  10. Qifeng Lyu, Huaxing Jiang, and Kei May Lau, “High Gain and High Ultraviolet/Visible Rejection Ratio Photodetectors Using p-GaN/AlGaN/GaN Heterostructures Grown on Si”, Applied Physics Letters, vol. 117, no. 7, p. 071101, 2020. DOI: 10.1063/5.0011685. (Editors' Pick, Featured on the APL cover)

  11. Xing Lu, Xianda Zhou, Huaxing Jiang, Kar Wei Ng, Zimin Chen, Yanli Pei, Kei May Lau, and Gang Wang, “1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below 1 µA/cm2”, IEEE Electron Device Letters, vol. 41, no. 3, pp.449-452, 2020. DOI: 10.1109/LED.2020.2967418.

  12. Yangqian Wang, Yitian Gu, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, and Xinbo Zou, “Comparative Study on Dynamic Characteristics of GaN HEMT at 300 K and 150 K”, IEEE Journal of the Electron Devices Society, vol. 8, pp. 850-856, 2020. DOI: 10.1109/JEDS.2020.3013656.

  13. Xing Lu, Xu Zhang, Huaxing Jiang, Xinbo Zou, Kei May Lau, and Gang Wang, “Vertical beta-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance”, Physica Status Solidi A, vol. 217, no. 3, p. 1900497, 2020. DOI: 10.1002/pssa.201900497.

  14. Leidang Zhou, Xing Lu, Jin Wu, Huaxing Jiang, Liang Chen, Xiaoping Ouyang, and Kei May Lau, “Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes”, IEEE Electron Device Letters, vol. 40, no. 7, pp. 1044-1047, 2019. DOI: 10.1109/LED.2019.2914585.

  15. Xing Lu, Song Yang, Huaxing Jiang, and Jin Wu, “Monolithic Integration of GaN LEDs with Vertical Driving MOSFETs by Selective Area Growth and Band Engineering of the p-AlGaN Electron Blocking Layer through TCAD Simulation”, Semiconductor Science and Technology, vol. 34, no. 6, p. 064002, 2019. DOI: 10.1088/1361-6641/ab13e1.

  16. Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, and Kei May Lau, “High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown”, IEEE Electron Device Letters, vol. 40, no. 4, pp. 530-533, 2019. DOI: 10.1109/LED.2019.2897694. (Editors' Pick)

  17. Tongde Huang, Huaxing Jiang, Johan Bergsten, Kei May Lau, and Niklas Rorsman, “Enhanced Gate Stack Stability in GaN Transistors with Gate Dielectric of Bilayer SiNx by Low Pressure Chemical Vapor Deposition”, Applied Physics Letters, vol. 113, no. 23, p. 232102, 2018. DOI: 10.1063/1.5042809.

  18. Huaxing Jiang, Chao Liu, Kar Wei Ng, Chak Wah Tang, and Kei May Lau, “High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric”, IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5337-5342, 2018. DOI: 10.1109/TED.2018.2874075.

  19. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau, “Monolithic Integration of III-Nitride Voltage-Controlled Light Emitters with Dual-Wavelength Photodiodes by Selective-Area Epitaxy”, Optics Letters, vol. 43, no. 14, pp. 3401-3404, 2018. DOI: 10.1364/OL.43.003401.

  20. Yaoqiao Hu, Huaxing Jiang, Kei May Lau, and Qiang Li, “Chemical Vapor Deposited Monolayer MoS2 Top-Gate MOSFET with Atomic-Layer-Deposited ZrO2 as Gate Dielectric”, Semiconductor Science and Technology, vol. 33, no. 4, p. 045004, 2018. DOI: 10.1088/1361-6641/aaaa5f.

  21. Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High-k ZrO2 Gate Dielectric”, IEEE Electron Device Letters, vol. 39, no. 3, pp. 405-408, 2018. DOI: 10.1109/LED.2018.2792839.

  22. Jie Ren, Chak Wah Tang, Hao Feng, Huaxing Jiang, Wentao Yang, Xianda Zhou, Kei May Lau, and Johnny K. O. Sin, “A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor”, IEEE Electron Device Letters, vol. 39, no. 3, pp.394-396, 2018. DOI: 10.1109/LED.2018.2791586.

  23. Lisong Li, Yuan Gao, Huaxing Jiang, Philip K. T. Mok, and Kei May Lau, “An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors”, IEEE Journal of Solid-State Circuits, vol. 53, no. 3, pp. 913-923, 2018. DOI: 10.1109/JSSC.2017.2783685.

  24. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, and Kei May Lau, “High Performance Monolithically Integrated GaN Driving VMOSFET on LED”, IEEE Electron Device Letters, vol. 38, no. 6, pp. 752- 755, 2017. DOI: 10.1109/LED.2017.2691908.

  25. Xing Lu, Kun Yu, Huaxing Jiang, Anping Zhang, and Kei May Lau, “Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric”, IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 824-831, 2017. DOI: 10.1109/TED.2017.2654358.

  26. Huaxing Jiang, Chao Liu, Yuying Chen, Xing Lu, Chak Wah Tang, and Kei May Lau, “Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs”, IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 832-839, 2017. DOI: 10.1109/TED.2016.2638855.

  27. Qiang Li, Huaxing Jiang, and Kei May Lau, “Coalescence of Planar GaAs Nanowires into Strain-Free Three-Dimensional Crystals on Exact (001) Silicon”, Journal of Crystal Growth, vol. 454, pp. 19-24, 2016. DOI: 10.1016/j.jcrysgro.2016.08.051.

  28. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, “Monolithic Integration of Enhancement-Mode Vertical Driving Transistors on a Standard InGaN/GaN Light Emitting Diode Structure”, Applied Physics Letters, vol. 109, no. 5, p. 053504, 2016. DOI: 10.1063/1.4960105.

  29. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, “Off-State Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-Gate Annealing”, Semiconductor Science and Technology, vol. 31, no. 5, p. 055019, 2016. DOI: 10.1088/0268-1242/31/5/055019.

  30. Huaxing Jiang, Xing Lu, Chao Liu, Qiang Li, and Kei May Lau, “Off-State Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si”, Physica Status Solidi A, vol. 213, no. 4, pp. 868-872, 2016. DOI: 10.1002/pssa.201532730.

  31. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau, “Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors”, Journal of Electronic Materials, vol. 45, no. 4, pp. 2092-2101, 2016. DOI: 10.1007/s11664-016-4387-7.

  32. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, “Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate”, Applied Physics Express, vol. 9, no. 3, p. 031001, 2016. DOI: 10.7567/APEX.9.031001.

  33. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, Peiqiang Xu, and Kei May Lau, “Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric”, IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 1862-1869, 2015. DOI: 10.1109/TED.2015.2421031.

  34. Jun Ma, Xing Lu, Xueliang Zhu, Tongde Huang, Huaxing Jiang, Peiqiang Xu, and Kei May Lau, “MOVPE Growth of In Situ SiNx/AlN/GaN MISHEMTs with Low Leakage Current and High On/Off Current Ratio”, Journal of Crystal Growth, vol. 414, pp. 237-242, 2015. DOI: 10.1016/j.jcrysgro.2014.11.025.

  35. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, and Kei May Lau, “Low Trap States in In Situ SiNx/AlN/GaN Metal-Insulator-Semiconductor Structures Grown by Metal-Organic Chemical Vapor Deposition”, Applied Physics Letters, vol. 105, no. 10, p. 102911, 2014. DOI: 10.1063/1.4895677.

  36. Jun Ma, Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, “In Situ Growth of SiNx as Gate Dielectric and Surface Passivation for AIN/GaN Heterostructures by Metalorganic Chemical Vapor Deposition”, Applied Physics Express, vol. 7, no. 9, p. 091002, 2014. DOI: 10.7567/APEX.7.091002.

  37. Yubo Li, Tianyuan Cheng, Xiao Wang, Huaxing Jiang, Hangsheng Yang, and Kenji Nose, “Structural and Electronic Properties of Cubic Boron Nitride Doped with Zinc”, Journal of Applied Physics, vol. 116, no. 4, p. 043507, 2014. DOI: 10.1063/1.4890607.

  38. Xing Lu, Jun Ma, Zhaojun Liu, Huaxing Jiang, Tongde Huang, and Kei May Lau, “In Situ SiNx Gate Dielectric by MOCVD for Low-Leakage-Current Ultra-Thin-Barrier AlN/GaN MISHEMTs on Si”, Physica Status Solidi A, vol. 211, no. 4, pp. 775-778, 2014. DOI: 10.1002/pssa.201300495.

  39. Xing Lu, Jun Ma, Huaxing Jiang, and Kei May Lau, “Characterization of In Situ SiNx Thin Film Grown on AlN/GaN Heterostructure by Metal-Organic Chemical Vapor Deposition”, Applied Physics Letters, vol. 104, no. 3, p. 032903, 2014. DOI: 10.1063/1.4862664.

  40. Yubo Li, Huaxing Jiang, Guangzhong Yuan, Aili Chen, Xiao Wang, Tingge Dai, and Hangsheng Yang, “Electronic Structure and Impurity States of S-doped cBN: A First-Principle Study”, Journal of Alloys and Compounds, vol. 531, pp. 82-85, 2012. DOI: 10.1016/j.jallcom.2012.04.002.