PUBLICATIONS

  1. Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, Peng Xiang, Kai Cheng, and Kei May Lau, “High-Voltage Low-ON-Resistance p-GaN Gate HEMTs on Si with Suppressed Current Collapse Operations up to 1000 V,” the 13th International Conference on Nitride Semiconductors (ICNS), Bellevue, Washington, USA, July 7-12, 2019.

  2. Yuan Ren, Xing Lu, Huaxing Jiang, Baijun Zhang, Zhitao Chen, and Kei May Lau, “Electrical Properties of GaN SBDs with 14MeV Fast Neutron Irradiation,” the 13th International Conference on Nitride Semiconductors (ICNS), Bellevue, Washington, USA, July 7-12, 2019.

  3. Xing Lu, Xu Zhang, Huaxing Jiang, Xinbo Zou, Kei May Lau, “Vertical Schottky barrier diodes based on a bulk beta -Ga2O3 substrate with high switching performance,” the 46th International Symposium on Compound Semiconductors (ISCS), Nara, Japan, May 19-23, 2019.

  4. Qifeng Lyu, Huaxing Jiang, Xing Lu, and Kei May Lau, “High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure,” the 46th International Symposium on Compound Semiconductors (ISCS), Nara, Japan, May 19-23, 2019.

  5. Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “High-Voltage Enhancement-Mode AlGaN/GaN/Si MOSHEMTs with Non-Recessed Thin Barrier and High-k ZrO2 Gate Dielectric,” International Workshop on Nitride Semiconductors (IWN), Kanazawa, Japan, Nov. 11-16, 2018.

  6. Renqiang Zhu, Huaxing Jiang, and Kei May Lau, “Large-Vth Low-Gate-Current p-GaN HEMTs with a TiW Gate Metal,” International Workshop on Nitride Semiconductors (IWN), Kanazawa, Japan, Nov. 11-16, 2018.

  7. Qifeng Lyu, Huaxing Jiang, Peng Xiang, Kai Cheng, and Kei May Lau, “Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation,” the 45th International Symposium on Compound Semiconductors (ISCS), Cambridge, MA, USA, May 29-Jun. 1, 2018.

  8. Jie Ren, Chak Wah Tang, Hao Feng, Huaxing Jiang, Wentao Yang, Xianda Zhou, Kei May Lau, and Johnny Kin On Sin, “Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET,” the 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018.

  9. Huaxing Jiang, Chao Liu, Yuying Chen, Chak Wah Tang, and Kei May Lau, “Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric,” International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Indian Wells, USA, May 22-25, 2017.

  10. Kei May Lau, Huaxing Jiang, Xinbo Zou, and Xu Zhang (Invited), “GaN Power Transistors and Diodes Grown on Si,” the 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS), Qingdao, China, Sep. 24-27, 2017.

  11. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, “High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric,” the 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, Jun. 26-30, 2016.

  12. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, “Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation,” International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, USA, May 16-19, 2016.

  13. Chao Liu, Huaxing Jiang, Yuefei Cai, and Kei May Lau, “Monolithically Integrated GaN-based HEMT-LED and InGaN/GaN Photodiodes for On Chip Optical Interconnects,” the 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, Jun. 26-30, 2016.

  14. Tongde Huang, Chao Liu, Johan Bergsten, Huaxing Jiang, Kei May Lau, and Niklas Rorsman, “Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process,” the 43rd International Symposium on Compound Semiconductors (ISCS),  Toyama, Japan, Jun. 26-30, 2016.

  15. Kun Yu, Chao Liu, Huaxing Jiang, Xing Lu, Kei May Lau, and Anping Zhang, “Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs,” International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19, 2016. 

  16. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, “Control of Threshold Voltage in Ultrathin- Barrier AlGaN/GaN based MISHEMTs with Low-Frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer,” the 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug. 30-Sep. 4, 2015. 

  17. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, “Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Silicon,” the 42nd International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, Jun. 26-30, 2015.

  18. Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, “Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment,” the 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug. 30-Sep. 4, 2015.

  19. Xing Lu, Jun Ma, Peiqiang Xu, Huaxing Jiang, and Kei May Lau, “High Performance Self-aligned AlN/GaN MISHEMT with in-situ SiNx Gate Dielectric and Regrown Source/Drain,” International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Denver, USA, May 19-22, 2014.