报告题目：Epitaxy at Weakly-Coupled Interface

报告人：Jian Shi 副教授（伦斯勒理工学院）

报告时间：2019年12月16日（星期一）下午15:00-17:00

报告地点：14号楼205室

欢迎广大师生前往！

材料科学与工程学院

2019年12月10日

内容摘要：

Dimensionality effect has been found interesting in exploring new physics and effective in engineering materials’ physical properties. However, often intrinsic material behaviors are clouded by the underlying support through strongly-coupled interface. In this talk, I will show our efforts and discovery on developing weakly-coupled epitaxial interface for semiconducting halides. I will present the serendipity and challenges while working on complex oxide interfaces.

References: Nat. Commun. 2019, 10, 4145; Science Advances 2018, 4, eaar3679; Nano Lett. 2019 Dec 4. doi: 10.1021/acs.nanolett.9b02696. 

报告人简介：

Dr. Jian Shi is an Associate Professor in the Department of Materials Science and Engineering at Rensselaer Polytechnic Institute. Prior to this appointment, Dr. Shi was a postdoctoral research fellow at Harvard University from 2013 to 2014. He received his Ph.D. degree in Materials Science at the University of Wisconsin at Madison in 2012, his M.S. degree in Mechanical Engineering at the University of Missouri at Columbia in 2008 and his B.S. degree in Materials Science and Engineering at Xi’an Jiaotong University in 2006. Dr. Shi is a recipient of 2018 Rensselaer Polytechnic Institute School of Engineering Research Excellence Award. Dr. Shi also received Air Force Office of Scientific Research (AFOSR) Young Investigator Research Program (YIP) Award in Oct 2017. Dr. Shi is an Early Career Member in the Editorial Advisory Board of Journal of Applied Physics. His current research focuses on the growth and study of the physical properties of semiconducting and phase transition materials.