报告题目:3D interconnected graphene foams and 1D graphene nanoribbons by CVD
报 告 人:陈宗平 博士(德国马普高分子所)
报告时间:2017年5月4日(周四) 9:00
报告地点:五山校区14号楼205会议室
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材料科学与工程学院
2017年5月2日
报告摘要:Graphene is a two-dimensional monolayer of carbon atoms packed into a honeycomb lattice that possesses a wealth of new physics and fascinating electrical, thermal, and mechanical properties. To harness these properties for macroscopic applications, both large-scale synthesis and integration of high-quality individual graphene sheets to advanced multi-functional structures are required. Here chemical vapor deposition (CVD) synthesis of high-quality graphene three-dimensional (3D) network structure, which we named graphene foams (GFs), was systematically studied. The graphene sheets in the GFs are seamlessly interconnected into a 3D flexible network as the fast transport channel of charge carriers. The GFs show a high electrical conductivity, an ultra-low density, a high porosity and a very high specific surface area, which shows great potential for many applications, such as highly-conductive composites and elastic conductors, lightweight high-performance electromagnetic interference shielding materials, flexible lithium ion battery with ultrafast charge and discharge rates, and highly-sensitive gas sensors.
However, graphene is a two-dimensional semi-metallic crystal with zero bandgap, which hindes its use in many electronic and optoelectronic devices. Graphene nanoribbons (GNRs), quasi-one-dimensional narrow strips of graphene, have shown great promise for use as advanced semiconductors in electronics. An efficient CVD process was also demonstrated for inexpensive and high-throughput growth of structurally defined GNRs over large areas. The CVD-grown GNRs exhibit similar structures and properties with those synthesized under UHV conditions. Homogenous GNR films over areas of centimetres have been successfully transferred to non-conducting wafers and exhibited a large current on/off ratio in field-effect transistor devices, This “bottom-up” CVD method further allows the growth of other kinds of sturctures, demonstrating the versatility and scalability of this process, which provides access to a broad class of GNRs with engineered structures and properties based on molecular-scale design. These results pave the way toward the scalable and controllable growth of GNRs, and provide practical solutions to the current challenges in graphene-based nanoelectronic, optoelectronic and photonic devices.
报告人简介:陈宗平博士2007年毕业于中南大学,获工学学士学位。同年进入中国科学院金属研究所攻读博士学位, 并于2013年获得材料学博士学位。2013年7月至今在德国马普高分子所从事博士后研究工作。他专注于石墨烯等低维纳米材料的研究,特别集中在采用化学气相沉积法大规模制备石墨烯三维网络宏观体材料及具有精确结构的石墨烯纳米带等纳米材料,以及开发其在纳电子、光电子器件等领域的应用。以第一作者在Nature Materials、PNAS、Advanced Materials、JACS等国际著名杂志发表学术论文7篇。其中有关石墨烯三维网络宏观体材料的工作获得“2011年度中国科学十大进展”及“2015年度辽宁省自然科学一等奖”等奖励,他也由此获得2013年“中国科学院院长特别奖”及2014年“中国科学院优秀博士论文”。