报告题目：Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
报 告 人：陈伟教授（新加坡国立大学）
报告时间：7月13日上午10:00
报告地点：发光材料与器件国家重点实验室502会议室
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                                         材料科学与工程学院
                                             2017年7月5日
个人简介：
Dr. CHEN Wei is currently an Associate Professor (2013 - ) in both Chemistry Department and Physics Department at National University of Singapore (NUS). He received his Bachelor’s degree in Chemistry from Nanjing University (China) in 2001, and Ph.D. degree from Chemistry Department at NUS in 2004 under the supervision of Prof Loh Kian Ping and Prof Andrew T. S. Wee. His current research interests include Molecular-scale Interface Engineering for Molecular, Organic and 2D Materials-based Electronics, and Interface-Controlled Nanocatalysis for Energy and Environmental Research.
内容摘要：
Black phosphorus (BP), as a fast-emerging two-dimensional (2D) material, stands out from other members in 2D family such as graphene and transition metal dichalcogenides (TMDs), and attracts substantial research interests attributed to its remarkably unique fundamental properties and versatile device applications. In this talk, I will summarize and discuss our recent work for interface engineered 2D materials phosphorene based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices