Title: Defect and impurity regulation in Semiconductors: From Equilibrium to Non-equilibrium

Author: Huang Bing (Beijing Research Center for Computing Science, China Academy of Engineering Physics)

Host: Professor Zhao Yujun

Report time: 10:00am, Tuesday, 29 December 2020

Venue: Lecture Hall, Room 213, 2 / F, Physics Building (Building 18)

Welcome to join us!

School of Physics and Optoelectronics

21 December 2020

Attachment:

Abstract: A core research direction of semiconductor physics is the control of defects and impurities in semiconductors, which is related to the basic physical properties of semiconductors and practical application prospects. In this report, I will expound some of the work that our research group has done in this field in the past few years. In the equilibrium state, a series of complete theories or schemes are proposed to improve the dissolution of impurities

In the wide band gap semiconductor to achieve shallow doping, control the electron level position of impurities. Recently, we have further extended the defect theory in equilibrium state to non-equilibrium state, for example, we have studied the formation dynamic process of complex defect reconstruction on surface, and the defect dynamic evolution mechanism under irradiation and ion implantation state.

Huang Bing received his B.S. from Jilin University in 2005 and Ph.D. from The Department of Physics, Tsinghua University in 2010. From 2010 to 2015, he was a postdoctoral fellow, research Assistant or Research Assistant professor at the Renewable Energy National Laboratory, Oak Forest National Laboratory, and the University of Utah. Since 2015, he has been a distinguished researcher and researcher at The Beijing Computational Science Research Center. His main research fields are semiconductor physics and computational condensed matter physics, focusing on the development of defect theory in semiconductors and novel quantum effects in semiconductors. He has published more than 80 papers with more than 4000 citations in total.