From October 12 to 15, the final on-site competition of the China International College Students Innovation Competition (2025) was held at Zhengzhou University. South China University of Technology (SCUT) had seven projects advance to the final on-site competition. After intense competition, SCUT ultimately secured six gold awards and one silver award, ranking first in Guangdong Province and among the top in the nation in terms of gold awards.  

Among them, the project Hengyiwei Technology—The Leader of a New Generation of Magnetic Memory Chip Architecture from the School of Microelectronics won a gold award in the Main Track - Undergraduate Category. This is also the first gold award in the main track from the Guangzhou International Campus.

Photo: The award ceremony (the 7th from the right is the student representative of our school’s winning project).

The outstanding achievements in this competition are attributed to the high attention and careful organization by the university and the school. Since the preparation for this competition began, various departments of the university and the school have collaborated closely, establishing a working group for the competition. The university organized multiple rounds of online and offline project guidance to enhance the competitiveness of the projects. The school also monitored the progress of the projects throughout, providing a comprehensive chip testing platform and financial support. Advisors such as Jiang Sheng repeatedly guided the project team in their research, laying a solid foundation for the excellent results in the competition.  

Photos: Project team defense, roadshow, and preparation scenes

Winning the gold award once again fully demonstrates the effectiveness of our school’s teaching-and-learning-driven competition model. In the future, our school will continue to cultivate students' practical skills and innovative awareness through competitions, building a platform for training high-quality, interdisciplinary, and innovative talents. We strive to nurture more three-creation (innovation, creation, entrepreneurship) talents for the nation and society.  

Project Introduction  

Project Name:  

Hengyiwei Technology—The Leader of a New Generation of Magnetic Memory Chip Architecture  

Project Members:  

Liu Qingren, Wei Jiantao, Zhang Ruixin, Chen Ruixue, Yang Tianhao, Zhang Junhao, Weng Qiqi, Wang Zixi, Liang Tianhui, Xie Yuxi, Jiao Yushan, Yang Yang, Sun Xiangfeng, Ma Daining, Luo Ruiqi  

Advisors:  

Jiang Sheng, Zi Zhihong, Li Bin, Yi Xiang  

Project Overview:  

The Hengyiwei Technology team, composed primarily of undergraduate students from microelectronics, integrated circuits, materials science, and other related disciplines, integrates interdisciplinary talents from mechanical engineering, finance, and other fields. The team is dedicated to addressing key challenges in the AI era, such as the memory wall, high power consumption, and low integration of memory chips. Based on an in-depth analysis of international memory technology trends and domestic industry needs, the team innovatively proposed a holistic solution integrating new materials, new architecture, and memory-computing convergence. The team successfully developed high-performance magnetic tunnel junctions based on Heusler alloys, a 1T multi-MTJ shared bitline architecture, and CMOS-compatible memory-computing circuits, systematically overcoming technical bottlenecks in write current, device density, and data bandwidth of spin memory chips, significantly improving energy efficiency and reliability. The project’s outcomes will be widely applied in industrial control, smart vehicles, edge computing, and other fields, contributing to the domestic replacement of high-end memory chips and promoting the high-quality development and green, low-carbon digital transformation of China’s integrated circuits industry through new productive forces.