Report Title: Reflections on Gallium Oxide

Time and Venue: November 20, 2025, 10:00 AM–12:00 PM, B1-c101, International Campus

Report Abstract: Wide and ultra-wide bandgap semiconductors create unique opportunities to address critical needs in areas such as power electronics, high-frequency communications, and extreme environments. These materials possess favorable properties, including high critical electric field strength, high electron velocity, thermal stability, and chemical stability, demonstrating significant advantages over existing technological solutions. As one of the most extensively studied ultra-wide bandgap semiconductors today, gallium oxide has garnered broad interdisciplinary attention worldwide due to its considerable potential for efficient power conversion. It is expected to pioneer cutting-edge technologies that meet the demands for system performance and cost in emerging medium/high-voltage power applications, such as electrified transportation, motor drive systems, and the integration of renewable energy with the power grid. This presentation will highlight the demonstrated advantages and untapped potential of gallium oxide power devices, as well as several research directions pursued by my team in response to the technological requirements of gallium oxide power device development.

Speaker: Associate Professor Man Hoi Wong

Host: Associate Professor Huaxing Jiang

Biography:Man Hoi Wong is an Associate Professor in the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology. He earned dual B.S. degrees in Electrical Engineering and Materials Science from Cornell University in 2004 and a Ph.D. in Electrical Engineering from the University of California, Santa Barbara in 2009.

Prof. Wong was among the early researchers investigating nitrogen-polar GaN radio-frequency devices. From 2011 to 2013, he developed molecular beam epitaxy techniques for large-area III-V/Si monolithic integration at SEMATECH in the United States. Between 2013 and 2019, he worked on Ga2O3 power devices at the National Institute of Information and Communications Technology (NICT) in Japan. He served as an Assistant Professor at the University of Massachusetts Lowell from 2019 to 2022 before joining the Hong Kong University of Science and Technology in 2022.

Prof. Wong has authored multiple invited review articles on GaN and Ga2O3 device technologies and has delivered over 30 invited talks at academic conferences and forums. His research has been recognized with several awards, including the SEMATECH Excellence Award in 2012 and the NICT Individual Achievement Award in 2019. He currently serves as an editor for the Journal of Materials Research (Springer) and IEEE Transactions on Electron Devices.