Name: Yingda QIAN

Research Interests: III-Nitride Materials Science; Photoelectric and Piezoelectric Property Research of Functional Materials; MEMS Device Research

E-mail: yingdaqian@scut.edu.cn

Selected Publications:

(1)Y. Qian, H. Yang, C. Zhang, D. S. Wuu, D. N. Talwar, H. H. Lin, J. F. Lee, L. Wan, K. He, Z. C. Feng, Surface/structural characteristics and band alignments of thin Ga₂O₃ films grown on sapphire by pulse laser deposition, Applied Surface Science, 2019, Vol. 479, pp. 1246–1253.

(2）Y. Qian, M. Tian, C. Zhang, L. Li, S. Yao, I. Ferguson, D. Talwar, J. Zhai, D. Meng, K. He, L. Wan, Z. Feng, Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metal-organic chemical vapor deposition, Optical Materials Express, 2018, Vol. 8, Issue 10, pp. 3184–3196.

（3）Y. Qian, K. Miyano, S. Kaku, X. Zhao, M. Murayama, Effect of structural changes induced by annealing atmospheres on luminescence of Eu²⁺- and Eu³⁺-doped AlN thin films, Physica Status Solidi (b), 2025, Vol. 262, 2400544.