Name: Hulei YU
Address: School of Materials Science and Engineering, South China University of Technology, Guangzhou, China 510640
Tel: 020-87110290
Email: huleiyu@scut.edu.cn
Research Interests:
Material physics, first-principles calculations, high-entropy ceramics, thermoelectric materials, and high-pressure physics.
Selected Publications:
[1] M Cai, C He, H Yu*, and A Shui*, Fabrication of the ternary dual S-scheme ZnO/ZnS/In2S3 heterojunction for enhancing pollutant photodegradation, Appl. Surf. Sci., 652 (2024) 159284.
[2] H Meng, P Wei, Z Tang, H Yu*, and Y Chu*, Data-driven discovery of formation ability descriptors for high-entropy rare-earth monosilicates, J. Materiomics, (2023), in press.
[3] H Yu and Y Chen*, Doping effects on the stability and superconductivity of penta-graphene-like ZrH10 and HfH10 under pressure, Phys. Rev. B, 106 (2022) 024515.
[4] H Yu, W Li, Y Pei and Y Chen*, Pressure and doping effects on the structural stability of thermoelectric BaAg2Te2, J. Phys.: Condens. Matter., 34 (2021) 065401.
[5] H Yu and Y Chen*, Pressure-induced electrides and metallic phases in the Y-Cl system, J. Phys.: Condens. Matter., 33 (2021) 215401.
[6] H Yu and Y Chen*, Pressure-induced Ge2Se3 and Ge3Se4 crystals with low superconducting transition temperatures, Phys. Chem. Chem. Phys., 21 (2019) 15417.
[7] H Yu, X Lin, K Li*, and Y Chen*, Unveiling a novel cation-rich compound in high-pressure Pb-Te binary system, ACS Cent. Sci., 5 (2019) 683.
[8] H Yu, D Gao, X Wang, X Du, X Lin, W Guo, R Zou, C Jin, K Li*, and Y Chen*, Unraveling a novel ferroelectric GeSe phase and its transformation into a topological crystalline insulator under high pressure, NPG Asia Mater., 10 (2018) 882.
[9] H Yu and Y Chen*, Unexpected high-pressure phase of GeTe with an origin of low ionicity and electron delocalization, J. Phys. Chem. C, 122 (2018) 15673.
[10] H Yu, AR Shaikh, F Xiong, and Y Chen*, Enhanced out-of-plane electrical transport in n-type SnSe thermoelectrics induced by resonant states and charge delocalization, ACS Appl. Mater. Interfaces, 10 (2018) 9889.