Topic: Controlled Synthesis and Functionalization of Two-Dimensional Materials
Speaker: Dr. Lin Zhou, Massachusetts Institute of Technology
Time: 15:00, April 28, 2017
Venue: Room 205, Building 14, Wushan Campus
Abstract:
The controlled synthesis of highly crystalline large-area MoTe2 atomic layers is a challenge for the practical applications of this emerging material. Here we develop a novel approach for the growth of large-area, uniform and highly crystalline few-layer MoTe2 film via chemical vapor deposition (CVD). Large-area atomically thin MoTe2 film has been successfully synthesized by tellurization of a MoO3 film. The as-grown MoTe2 film is uniform, stoichiometric, and highly crystalline. As a result of the high crystallinity, the electronic properties of MoTe2 film are comparable with that of mechanically exfoliated MoTe2 flakes. Since the MoTe2 film is highly homogenous, and the size of the film is only limited by the substrate and CVD system size, our growth method paves the way for large-scale application of MoTe2 in high performance nanoelectronics and optoelectronics.