作者:Jin, YJ (Jin, Yuanjun)[1,2 ]; Gan, LY (Gan, Li-Yong)[1,2,3 ]; Wang, R (Wang, Rui)[1,2,4,5 ]; Zhao, JZ (Zhao, Jinzhu)[1,2 ]; Shan, YY (Shan, Yueyue)[1,2 ]; Liu, JF (Liu, Junfeng)[1,2 ]; Xu, H (Xu, Hu)[1,2 ]
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文献类型:Article
The search for large-band-gap quantum spin Hall (QSH) insulators, in which the dissipationless gapless edge states lie inside the bulk gap, is critical for their practical applications at room temperature. Based on first-principles calculations, we propose a sort of QSH insulator in a rectangular structure, i.e., AuSb, AuAs, and CuAs monolayers, which exhibits sizable bulk gaps up to 258 meV. These compounds host unexpected topological Rashba-like edge states, which exhibit strong dispersion with a nearly-free-electron feature. Such nontrivial edge states originate from spin-orbital coupling and an abrupt discontinuous potential across the surface. Furthermore, we argue that the AuSb monolayer can be epitaxially grown on a rutile TiO2(110) surface. Importantly, the thermodynamic stability of AuSb is enhanced while the topological features are perfectly preserved due to the weak van der Waals interaction at the interface. Our findings provide promising large-gap QSH candidates with exotic topological Rashba-like edge states that are in favor of experimental realization at room temperature.
KeyWords Plus:TRANSITION
通讯作者地址:Liu, JF (通讯作者)
 | Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China. |
| Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China. |
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电子邮件地址:liujf@sustc.edu.cn; xuh@sustc.edu.cn
| 基金资助机构 | 授权号 |
|---|---|
| National Natural Science Foundation of China (NSFC) | 11674148 11334003 11504303 11404159 |
| Guangdong Natural Science Funds for Distinguished Young Scholars | 2017B030306008 |
| Basic Research Program of Science, Technology and Innovation Commission of Shenzhen Municipality | JCYJ20160531190054083 |