Stacking Modes-Induced Chemical Reactivity Differences on Chemical Vapor Deposition-Grown Trilayer Graphene

时间:2018-07-31作者:浏览量:484


Stacking Modes-Induced Chemical Reactivity Differences on Chemical Vapor Deposition-Grown Trilayer Graphene

作者:Ding, Y (Ding, Yao)[1 ]; Wu, RZ (Wu, Ruizhe)[1 ]; Abidi, IH (Abidi, Irfan Haider)[1 ]; Wong, HL (Wong, Hoilun)[1 ]; Liu, ZJ (Liu, Zhenjing)[1 ]; Zhuang, MH (Zhuang, Minghao)[1 ]; Gan, LY (Gan, Li-Yong)[2 ]; Luo, ZT (Luo, Zhengtang)[1 ]


ACS APPLIED MATERIALS & INTERFACES


卷:10

期:27

页:23424-23431

DOI:10.1021/acsami.8b05635

出版年:JUL 11 2018

文献类型:Article

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摘要

Trilayer graphene (TLG) synthesized by chemical vapor deposition (CVD), in particular the twisted TLG, exhibits sophisticated electronic structures that depend on their stacking modes. Here, we computationally and experimentally demonstrate the chemical reactivity differences of CVD-TLG induced by the stacking modes and corroborated by a photoexcited phenyl-grafting reaction. The experimental results show that the ABA stacking TLGs have the most inert chemical property, yet 30 degrees-30 degrees stacking twisted TLGs are the most active. Further, density functional theory calculations have shown that the chemical reactivity difference can be quantitatively explained by the differences in the number of hot electrons generated in their valence band during irradiation. The activity difference is further verified by the calculated adsorption energy of phenyl on the TLGs. Our work provides insight into the chemistry of TLG and addresses the challenges associated with selective functionalization of TLG with phenyl groups. The understandings developed in this project can also guide the future development of TLG-based functional devices.

作者信息

通讯作者地址:Luo, ZT (通讯作者)

显示更多Hong Kong Univ Sci & Technol, Dept Chem & Biol Engn, Kowloon 999077, Hong Kong, Peoples R China.
通讯作者地址:Gan, LY (通讯作者)
显示更多South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510641, Guangdong, Peoples R China.


地址:

显示更多[ 1 ] Hong Kong Univ Sci & Technol, Dept Chem & Biol Engn, Kowloon 999077, Hong Kong, Peoples R China
显示更多[ 2 ] South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510641, Guangdong, Peoples R China


电子邮件地址:ganly@scut.edu.cn; keztluo@ust.hk

基金资助致谢
基金资助机构授权号
Research Grant Council of Hong Kong SAR 
16204815 
NSFC-RGC Joint Research Scheme 
N_HKUST607/17 
Innovation and Technology Commission 
ITC-CNERC14SC01 
ITS/267/15 
Guangzhou Science Technology 
2016201604030023 
201704030134 
National Natural Science Foundation of China 
11504303 
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出版商

AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA

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