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作者
作者:Wu, JM (Wu, Jian-Ming)[1 ]; Chen, LJ (Chen, Li-Juan)[1 ]; Yang, XB (Yang, Xiao-Bao)[1 ]; Zhao, YJ (Zhao, Yu-Jun)[1,2 ]
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文献类型:Article
摘要
First-principles calculations with GGA+U approach are carried out in studying the properties of intrinsic defects of the wurtzite MnO, and CoO. For intrinsic MnO, it shows tunable p-type and n-type conductivity under O rich and O poor conditions, respectively. For intrinsic CoO, it is easy to be designed as p-type semiconductors under O rich condition, but hard for n-type. We expect that the tunable p/n conductivity of MnO could open a new application prospect for the wurtzite semiconductor materials. (C) 2014 Elsevier B.V. All rights reserved.
关键词
作者关键词:CoO; MnO; Wurtzite structure; Intrinsic defects; p/n conductivity
作者信息
通讯作者地址:Zhao, YJ (通讯作者)
![]() | S China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China. |
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电子邮件地址:zhaoyj@scut.edu.cn
出版商
类别分类
研究方向:Physics
Web of Science 类别:Physics, Multidisciplinary