招生专业

个人简介

蒋华杏，香港科技大学电子及计算机工程哲学博士。主要研究方向包括宽禁带半导体功率器件及射频电子器件、高速光电子器件等。近年来在微电子器件领域著名期刊如IEEE Electron Device Letters （EDL）, IEEE Transactions on Electron Devices （TED）, Applied Physics Letters （APL）和国际会议上发表论文50余篇。受邀担任IEEE EDL、TED、JEDS以及APL等期刊的审稿人。

Huaxing Jiang received his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology. His research interests include wide-bandgap semiconductor-based devices for power and radio-frequency applications and high-speed optoelectronic devices. He has published more than 50 papers in the top-tier journals and conferences in microelectronics including IEEE Electron Device Letters (EDL), IEEE Transactions on Electron Devices (TED), and Applied Physics Letters (APL). He also served as an invited reviewer for many international journals such as IEEE EDL, TED, JEDS, APL, and etc.

教育经历

2012.09-2017.08  香港科技大学电子及计算机工程  哲学博士

2008.09-2012.06  浙江大学    电子科学与技术工学学士

工作经历

2020.10至今   华南理工大学  预聘助理教授（副教授职称）、特聘研究员

2017.10-2020.09     香港科技大学  博士后

研究方向

宽禁带半导体功率器件及射频电子器件；高速光电子器件

代表性科研成果

[1]Huaxing Jiang, Qifeng Lyu, Renqiang Zhu, Peng Xiang, Kai Cheng, and Kei May Lau, “1300 V Normally-OFF p-GaN Gate HEMTs on Si with High ON-State Drain Current,” IEEE Transactions on Electron Devices, vol. 68, no. 2, pp. 653-657, 2021.

[2]Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, and Kei May Lau, “High-Voltage p-GaN HEMTs with OFF-State Blocking Capability after Gate Breakdown,” IEEE Electron Device Letters, vol. 40, no. 4, pp. 530-533, 2019. (Featured as Editor’s Pick)

[3]Huaxing Jiang, Chao Liu, Kar Wei Ng, Chak Wah Tang, and Kei May Lau, “High-Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO₂ Gate Dielectric,” IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5337-5342, 2018.

[4]Huaxing Jiang, Chak Wah Tang, and Kei May Lau, “Enhancement-Mode GaN MOS-HEMTs with Recess-Free Barrier Engineering and High-k ZrO₂ Gate Dielectric,” IEEE Electron Device Letters, vol. 39, no. 3, pp. 405-408, 2018.