招生专业

个人简介

马子超博士致力于后摩尔时代的低维纳米材料和电子器件的理论研究和创新集成方法。长期从事二维材料晶体管技术及器件物理的研究，创新的提出“同质集成低功耗二维互补逻辑电路”的概念及设计制造方法。计划开展低维纳米材料的神经形态晶体管集成电路及智能传感器边缘系统等研究，在神经形态计算架构突破“冯∙诺伊曼”瓶颈, 实现如边缘计算，智能超视觉、健康监测等应用。马子超博士是IEEE Member，近 5 年在国际著名期刊发表论文16篇，包括以第一作者发表的Adv. Electron. Mater.卷首封面论文，Adv. Intell. Syst.封面论文，和 J. Mater. Chem. C 底封面论文。2016 年获得香港政府博士奖学金，2019 年获得香港科技大学工学院学术奖，2021 年获得 IEEE 欧洲固态器件会议(ESSDERC)最佳论文奖。

Dr. Ma Zichao is committed to the theoretical research and innovative integration methods of low-dimensional nanomaterials and electronic devices in the post-Moore era. In the research of two-dimensional material transistor technology and device physics, he innovatively proposed the concept and design and manufacturing method of homogeneously integrated low-power two-dimensional complementary logic circuit. He plans to carry out research on neuromorphic transistor integrated circuits of low-dimensional nanomaterials and intelligent sensor edge systems, break through the Von Neumann bottleneck in the neuromorphic computing architecture, and realize applications such as edge computing, intelligent super vision, and health monitoring. He is an IEEE member, in the past 5 years, he has published 16 papers in internationally renowned journals, including a Frontispiece of Adv. Electron. Mater., an Inside Cover of Adv. Intell. Syst., and a Back Cover of J. Mater. Chem. C as the first author. He won the Hong Kong Government Doctoral Scholarship since 2016. In 2019, he won the Academic Award of the School of Engineering of the Hong Kong University of Science and Technology. In 2021, he won the Best Paper Award of the IEEE European Solid State Devices Conference (ESSDERC 2021).

研究方向

二维材料晶体管及集成电路、人工突触器件、类脑芯片与应用

授课课程

《模拟电子技术》、《微电子器件物理》

学术任职

IEEE会员，担任IEEE Trans. Electron Devices等多个国际期刊审稿人

科研项目

代表性科研成果

1.Zichao Ma, Cristine Jin Estrada, Kui Gong, Lining Zhang*, Mansun Chan, “On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole-Current P-channel Field-Effect Transistors”, Adv. Electron. Mater., 8: 2270052, 2022 (Frontispiece).

2.Swapnadeep Poddar†, Zhesi Chen†, Zichao Ma†(co-1st-author), Yuting Zhang, Chak Lam Jonathan Chan, Beitao Ren, Qianpeng Zhang, Daquan Zhang, Guozhen Shen, Zhiyong Fan*, “Robust Lead-free Perovskite Nanowire Array Based Artificial Synapses Exemplifying Gestalt Principle of Closure”, Adv. Intell. Syst. 4: 2270031, 2022 (Inside front cover).

3.Zichao Ma, Lining Zhang*, Changjian Zhou, Mansun Chan, “High Current Nb-Doped P-Channel MoS2 Field-Effect Transistor Using Pt Contact”, IEEE Electron Device Letters, 2021, 42(3), 343-346.

4.Cristine Jin Estrada, Zichao Ma*, Mansun Chan, “Complementary Two-Dimensional (2-D) FET Technology with MoS2/hBN/Graphene Stack”, IEEE Electron Device Letters, 2021, 42(12), 1890-1893.

5.Clarissa Prawoto, Zichao Ma, Ying Xiao, Salahuddin Raju, Mansun Chan, “Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction”, IEEE Transactions on Electron Devices, 68(10), p. 5078-5084, 2021.

6.Zichao Ma, Shaolin Zhou*, Changjian Zhou, Ying Xiao,Suwen Li and Mansun Chan, “Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts”, Nanomaterials, 2020, 10(10), 1918. (Invited Review).

7.Ying Xiao, Zichao Ma, Clarissa Cyrilla Prawoto, Changjian Zhou, Mansun Chan, “Ultralow-k Dielectric With Structured Pores for Interconnect Delay Reduction”, IEEE Transactions on Electron Devices, 67(5), p. 2071-2075, 2020

8.Zubair Ahmed, Qing Shi, Zichao Ma, Lining Zhang, Hong Guo, Mansun Chan, Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations, IEEE Electron Device Letters, 2020, 41(1), 171-174

9.Zichao Ma, Clarissa Prawoto, Zubair Ahmed, Ying Xiao, Lining Zhang*, Changjian Zhou, Mansun Chan, Control of hexagonal boron nitride dielectric thickness by single layer etching, J. Mater. Chem. C, 2019,7, 6273-6278. (Back cover article).

10.Clarissa Prawoto, Zichao Ma, Ying Xiao, Salahuddin Raju, Changjian Zhou, Mansun Chan, Interconnect technology with h-BN-capped air-gaps, IEEE Electron Device Letters, 40(11), 2019