刘玉荣 Liu Yurong

基本信息

职称:微电子学院教授、博导、硕导
Title: Professor, Doctoral & Graduate Supervisor, School of Microelectronics.
联系方式:phlyr@scut.edu.cn

招生专业

个人简介

    刘玉荣,研究方向为:触觉传感器阵列与感知系统,薄膜晶体管及其电路,MEMS超声传感器,低维材料与器件等。获国家发明专利授权6件,实用新型专利授权10件;发表SCI论文40余篇,其中IEEE期刊论文7篇;参著教材1部。先后主持国家自然科学基金2项和省自然科学基金2项,参与国家级、省部级科研项目多项。

        Liu Yurong, his research interests are in tactile sensor array and perceptual system, thin film transistor and its circuit, MEMS ultrasonic sensors, low dimensional materials and devices, etc. He has published more than 40 academic papers on SCI-indexed journals, including 7 IEEE journal papers, 6 national invention patents and 10 utility model patents, and a textbook. He has presided over 4 scientific research projects, including 2 in the National Natural Science Foundation of China and 2 in the Natural Science Foundation of Guangdong Province, and participated in many national and provincial scientific research projects. 

教育经历

2004.09-2007.06  华南理工大学博士

1993.09-1996.06  四川大学硕士

1987.09-1991.07  江西大学学士

工作经历

2012.07-至今 华南理工大学教授

2006.12-2012.07  华南理工大学副教授

1996.07-2006.11 华南理工大学助教、讲师

研究方向

触觉感知与集成技术,薄膜晶体管器件及电路,低维材料与器件,第三代半导体材料与器件,半导体器件可靠性等

授课课程

《半导体物理》、《微电子学科导论》、《集成传感器制造技术》、《深亚微米器件建模仿真》

科研项目

1.         国家自然科学基金面上项目         基于压电应变栅氧化物薄膜晶体管的柔性触觉传感器研究   2019/01-2022/12 主持

2.        国家自然科学基金面上项目   聚合物薄膜晶体管稳定性及其机理研究  2011/01-2013/12 主持

3.        广东省自然科学基金项目   电阻栅氧化物薄膜晶体管制备及其性能研究 2016/06-2019/06 主持

4.        广东省自然科学基金项目   聚合物薄膜晶体管稳定性研究2008/01-2010/12 主持

代表性科研成果

[1] Li H C#Liu Y R*Geng K WWu W JYao R HLai P T, Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric, J. Vac. Sci. Technol. B, 39(1): 012202, 2021.

[2] Guangpan Lu#, Yurong Liu*, Feng Lin, Kuiwei Gen, Weijing Wu and Ruohe Yao, Realization of artificial synapse and inverter based on oxide electric-double-layer transistor gated by a chitosan biopolymer electrolyte, Semicond. Sci. Technol., 35(7): 075014, 2020.

[3]Yurong Liu#,*, Yinxue Xiang, Effect of annealing of NbLaO dielectric on the electrical properties of ZnO thin-film transistor, J. Vac. Sci. Technol. B, 37(6): 062202, 2019.

[4] Yu-Rong Liu#,*, Gao-Wei Zhao, Pai-To Lai, and Ruo-He Yao, Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor, Chin. Phys. B, 25(8): 088503, 2016.

[5] Liu Yu-Rong#,*, Su Jing, Lai Pei-Taoand Yao Ruo-He, Positive Gate-Bias Temperature Instability of ZnO Thin-Film Transistor, Chinese Physics B, 23(6): 068501, 2014.

[6] Yurong Liu#,*, Shufeng Mo, Ruohe Yao, Pui To Lai, Negative gate-bias instability of ZnO thin-film transistors studied by current-voltage and capacitance-voltage analyses, Journal of Vacuum Science & Technology B, 32 (6): 061208, 2014.

[7] Y. R. Liu#,*, R. Liao, P. T. Lai, and R. H. Yao, Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene), IEEE Trans. Device Mater. Rel., 12 (1): 58-62, 2012.

[8] Yurong Liu#,*, P T Lai, Ruohe Yao and Linfeng Deng, Interface states in polymer thin-film transistors based on poly(3-hexylthiophene), Semicond. Sci. Technol. 27(5): 055015, 2012.

[9] Y. R. Liu#,*, P. T. Lai, R. H. Yao, and L. F. Deng, Influence of Octadecyltrichlorosilane Surface Modification on Electrical Properties of Polymer Thin-Film Transistors Studied by Capacitance–Voltage Analysis, IEEE Transactions on device and materials reliability, 11(1):60-65, 2011.

[10] 中国发明专利:一种平面分离双栅薄膜晶体管及其制备方法,ZL 201510976409.1

[11] 中国发明专利:一种电阻栅薄膜晶体管及其制备方法,ZL 201510981786.4

[12] 中国发明专利:柔性化电容式微加工超声换能器及其制备方法,ZL 201510907459.4.

[13] 中国发明专利:集成化电容式微加工超声换能器及其制备方法,ZL 201510278817.X

[14] 中国发明专利:一种柔性集成化超声换能器结构及其制备方法, ZL201010204614.3