基本信息
职称：微电子学院教授、博导、硕导
头衔：广东省引进高层次人才计划-青年拔尖人才
Title: Professor, Doctoral & Graduate Supervisor, School of Microelectronics
Honor: Guangdong Talent Program-Outstanding Young Talent
招生专业
个人简介
陈荣盛，华南理工大学微电子学院/集成电路学院教授、博士生导师，担任广东省智能传感器与专用集成电路工程技术研究中心副主任，入选广东省海外引进高层次青年人才、广州市高层次青年人才、TCL青年学者，电气与电子工程师协会IEEE高级会员，国际信息显示协会SID北京分会技术委员会委员。主要从事新型薄膜晶体管器件及其集成电路和系统的研究。先后主持10余项纵向科研项目和企业委托横向项目，以第一或通讯作者在IEEE TED、EDL、IEDM等国际著名期刊/旗舰会议上发表论文50多篇，授权国内外发明专利20余件。部分成果已实现产业化应用。
Chen Rongsheng, Professor, doctoral supervisor at the School of Microelectronics/Integrated Circuit, South China University of Technology. Serves as the deputy director of the Guangdong Provincial Engineering Technology Research Center for Intelligent Sensors and Specialized Integrated Circuits. Has been selected as a high-level young talent by Guangdong Province, a high-level young talent of Guangzhou City, and a TCL Young Scholar. Is a senior member of the Institute of Electrical and Electronics Engineers (IEEE) and a member of the Technical Committee of the Beijing Chapter of the Society for Information Display (SID). Mainly engaged in research on novel thin-film transistor devices and their integrated circuits and systems. Has successively presided over more than 10 scientific research projects and projects funded by enterprises. Has published over 50 papers as the first or corresponding author in internationally journals and flagship conferences such as IEEE TED, EDL, and IEDM. Has been granted over 20 invention patents. Some of the achievements have been applied in industrialization.
教育经历
2008-9至2013-5, 香港科技大学, 博士
2005-9至2008-7, 华南理工大学, 硕士
2001-9至2005-7, 华南理工大学, 学士
工作经历
2020-9至今, 华南理工大学, 教授
2016-6至2020-8, 华南理工大学, 副教授
2013-5至2016-5, 香港科技大学, 博士后副研究员
研究方向
柔性电子器件、薄膜晶体管（TFT）、柔性TFT集成电路及其集成传感系统
授课课程
《半导体器件》（广东省一流本科课程）、《微电子工艺及器件仿真》、《微电子工艺创新实践》、《薄膜晶体管与显示技术》
学术任职
IEEE高级会员Senior Member
国际信息显示协会SID北京分会技术委员会委员
广东省智能传感器与专用集成电路工程技术研究中心副主任
担任IEEE TED, IEEE EDL, APL，JEDS等多个国际期刊审稿人
科研项目
先后主持10余项科研项目，代表性科研项目包括：
1. 国家自然科学基金面上项目，基于复合晶型金属氧化物的柔性TFT关键技术研究
2. 国家自然科学基金青年项目，InSnZnO薄膜的磁控溅射法制备及其在垂直型薄膜晶体管上的应用
3. 广东省基础与应用基础研究基金重点项目，超轻量赋形高效太阳能电池技术研究
4. 广东省重点领域研发计划-课题，高端通用芯片设计关键技术与产品研发
5. 广州市基础与应用基础研究基金领航项目，面向柔性智能传感微系统的TFT集成电路研究
6. 广东省粤港联合创新项目，面向下一代AMOLED显示的EMMO结构金属氧化物薄膜晶体管的研究
7. 广东省工业高新技术领域，应用于新型显示的高性能InSnZnO 薄膜晶体管的关键技术研究
8. 广州市对外科技合作项目，应用于高分辨率AMOLED显示的InSnZnO薄膜晶体管及其有源阵列研究
9. 广东省基础与应用基础研究基金面上项目，柔性顶栅型InSnZnO薄膜晶体管关键技术研究
代表性科研成果
代表性论文
1.Delang Lin, Rongsheng Chen, Man Chun Tseng, Fion Sze Yan Yeung, and Hoi Sing Kwok, High Performance 3D ITZO DGTFTs and Their Application in Wearable Pulse Sensors, 2024 IEEE International Electron Devices Meeting (IEDM), DOI: 10.1109/IEDM50854.2024.10873512. （微电子器件领域顶级会议）
2.Mei Yang, Wei Huang, Rongsheng Chen, Zhiling Ma, Flexible Electrospun Nanofibers for Tactile Sensing and Integrated System Research, IEEE Sensors Journal, 25(1): 9-16, 2025, DOI: 10.1109/JSEN.2024.3493072.
3.Delang Lin, Changjian Zhou, Dongxiang Luo, Baiquan Liu and Rongsheng Chen, Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection, IEEE Electron Device Letters, 44(7): 1120-1123, 2023, DOI: 10.1109/LED.2023.3273212.
4.Delang Lin, Xiang Li, Wei Zhong, Changjian Zhou, Linfeng Lan, Rongsheng Chen, Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer, IEEE Transactions on Electron Devices, 69(11): 6146-6153, 2022, DOI: 10.1109/TED.2022.3204521.
5.Wei Zhong, Jianfeng Zhang, Yuan Liu, Lijun Tan, Linfeng Lan, Sunbin Deng, Fion Sze Yan Yeung, Hoi Sing Kwok, and Rongsheng Chen, Gate Dielectric Treated by Self-Assembled Monolayers (SAMs) to Enhance the Performance of InSnZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, 69(5): 2398-2403, 2022, DOI: 10.1109/TED.2022.3155709.
6.Hui Li, Sunbin Deng, Yuming Xu, Wei Zhong, Dongxiang Luo, Guijun Li, Hoi Sing Kwok, Rongsheng Chen, A Differential Ring Oscillator with Tail Current Source Control Scheme Using N-Type Oxide TFTs, IEEE Transactions on Electron Devices, 69(4): 1870-1875, 2022, DOI: 10.1109/TED.2022.3152453.
7.Yuming Xu, Zhaohui Wu, Bin Li, Sunbin Deng, Wei Zhong, Guijun Li, Dongxiang Luo, Fion Sze Yan Yeung, Hoi Sing Kwok, Rongsheng Chen, Oxide TFT Frontend Amplifiers for Flexible Sensing Systems, IEEE Transactions on Electron Devices, 68(12): 6190-6196, 2021, DOI: 10.1109/TED.2021.3120023.
8.Yayi Chen, Bin Li, Wei Zhong, Dongxiang Luo, Guijun Li, Changjian Zhou, Linfeng Lan, Rongsheng Chen, Effect of Head Groups in Self-Assembled Monolayer Passivation on Properties of InSnZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, 69(1): 160-165, 2022, DOI: 10.1109/TED.2021.3126568.
9.Yayi Chen, Bin Li, Wei Zhong, Guijun Li, Lei Lu, Changjian Zhou, Linfeng Lan, Rongsheng Chen, InSnZnO Thin-Film Transistors with Nitrogenous Self-Assembled Multilayers Passivation, IEEE Transactions on Electron Devices, 68(11): 5612-5617, 2021, DOI: 10.1109/TED.2021.3114267.
10.Wei Zhong, Liangyun Kang, Sunbin Deng, Lei Lu, Ruohe Yao, Linfeng Lan, Hoi Sing Kwok, Rongsheng Chen, Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, 68(10): 4956-4961, 2021, DOI: 10.1109/TED.2021.3105486.
11.Weiwei Shi, Lizhi Hu, Yuan Liu, Sunbin Deng, Yuming Xu, Hoi-Sing Kwok, Rongsheng Chen, Arithmetic and Logic Circuits Based on ITO-Stabilized ZnO TFT for Transparent Electronics, IEEE Transactions on Circuits and Systems I-Regular Papers, 69(1): 356-365, 2022, DOI: 10.1109/TCSI.2021.3100138.
12.Houbo Fan, Guoyuan Li, Sunbin Deng, Yuming Xu, Yuning Qin, Yuan Liu, Sze Yan Fion Yeung, Man Wong, Hoi Sing Kwok, Rongsheng Chen, A High Gain Low-Noise Amplifier Based on ITO-Stabilized ZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, 67(12):5537-5543, 2020, DOI: 10.1109/TED.2020.3031577.
13.Yuming Xu, Bin Li, Sunbin Deng, Yuning Qin, Houbo Fan, Wei Zhong, Yuan Liu, Zhaohui Wu, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Rongsheng Chen, A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs, IEEE Transactions on Circuits and Systems II-Express Briefs, 67(11): 2367-2371, 2020, DOI: 10.1109/TCSII.2020.2969273.
14.Wei Zhong, Ruohe Yao, Yuan Liu, Linfeng Lan, Rongsheng Chen, Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors, IEEE Transactions on Electron Devices, 67(8): 3157-3162, 2020, DOI: 10.1109/TED.2020.3004420.
15.Xuemei Yin, Sunbin Deng, Guoyuan Li, Wei Zhong, Rongsheng Chen, Guijun Li, F. S. Y. Yeung, Man Wong, Hoi Sing Kwok, Low Leakage Current Vertical Thin-Film Transistors with InSnO-Stabilized ZnO Channel, IEEE Electron Device Letters, 41(2): 248-251, 2020, DOI: 10.1109/LED.2019.2960883.
近年授权发明专利
1. Chen Rongsheng; Li Hui; Xu Yuming; Wen Mingzhu ; Charge Pump Phase-Locked Loop Based on Unipolar Thin Film Transistor, Chip, and Method, 2021-07-28, 美国, US 11,552,642 B2.
2. Chen Rongsheng; Wen Mingzhu; Xu Yuming; Li Hui ; Operational Amplifier Based on Metal-Oxide TFT, Chip, and Method, 2021-07-26, 美国, US 11,626,845 B2.
3. Chen Rongsheng; Deng Sunbin; Kwok Hoi Sing ; Method for manufacturing a top-gate selfaligned indium-tin-zinc oxide thin-film transistor, 2017-10-19, 美国, US 11,049,881 B2.
4. 陈荣盛; 林德朗 ; 一种柔性深紫外光电突触晶体管及其制备方法和应用, 2024-4-22, 中国, ZL202410483344.6.
5. 陈荣盛; 林德朗 ; 一种氧化锌基双栅薄膜晶体管及其制备方法和应用, 2023-9-19, 中国, ZL202311216852.X.
6. 陈荣盛; 陈德润; 徐煜明; 刘坤荣 ; 单极差分逻辑静态随机存取存储单元及随机存取存储器, 2021-9-13, 中国, ZL202111066826.4.
7. 陈荣盛; 钟伟; 邓孙斌; 李国元; 吴朝晖; 李斌 ; 一种二硫化钼薄膜的制备方法, 2020-8-28, 中国, ZL201910049361.8.
8. 陈荣盛; 严乐龙; 钟伟 ; 钝化层及其制备方法、柔性薄膜晶体管及其制备方法、阵列基板, 2020-12-29, 中国, ZL202011596763.9.
9. 陈荣盛; 李辉; 徐煜明; 文明珠 ; 一种基于单极型薄膜晶体管的电荷泵锁相环、芯片及方法, 2020-10-13, 中国, ZL202011089549.4.
10. 陈荣盛; 文明珠; 徐煜明; 李辉 ; 一种基于金属氧化物TFT的运算放大器、芯片及方法, 2020-10-13, 中国, ZL202011089541.8