关于举行中国科学院宁波材料技术与工程研究所曹鸿涛研究员学术报告的通知
报告题目：The progress on novel oxide-based functional thin films and devices
报告人：曹鸿涛 研究员（中国科学院宁波材料技术与工程研究所）
邀请人：兰林锋 研究员
报告时间：2017年6月8日 下午15:00
报告地点：北区科技园1号楼国家重点实验室502会议室
报告摘要:
(1) Oxide thin-film transistor (TFT)-based electronic components such as inverters and logic circuits are attractive due to their low-cost, low-temperature fabrication, and ease of large-area processability. In addition to exploring high performance unipolar oxide TFTs, ambipolar thin film transistors based on both p-type and n-type channels in one device with thereby simplified circuit design and fabrication processes (No separate patterning or/and doping steps needed), are gaining ever-increasing attention as an alternative approach to realize integrated circuits. In this work, the origin of the unique bipolar property of SnO was discussed based on theoretical calculations, and SnO ambipolar TFTs with balanced hole and electron field-effect mobilities were demonstrated through balancing both the injection and the transport of holes and electrons. Subsequently, ambipolar CMOS-like inverters working in both the first and third quadrants were demonstrated with output voltage gains over 100 by integrating two identical ambipolar SnO TFTs, behaving as a valuable building block of oxide logic circuits. Moreover, the inverters exhibit excellent environmental stability, a prerequisite for the future ubiquitous electronics. These results suggest that, a simple route in realizing oxide-based ambipolar TFTs and CMOS-like inverters, offers a robust addition to the existing CMOS technology community.
(2) Developing plasmonic thin film materials with isotropic or anisotropic microstructure is highly desirable for solar thermal energy-harvesting and optical manipulation applications, respectively. On one hand, we designed AgAl-Al2O3nanocermet, after low-temperature pretreatment in air, exhibits stable plasmonic absorption feature with negligible degradation at 500 oC for 990 h in nitrogen ambient. It is believed that thermal-induced out-diffusion of Al atoms from AgAl bimetallic nanoparticles and their consequent oxidation afford an opportunity to generate self-organized alumina-capped Ag nanoparticles, suppressing the long-range diffusion of active Ag and wild growth of particle agglomerations so as to assure the microstructual integrity and plasmon absorption stability. On the other, we proposed a versatile strategy to create well-ordered silver nano forest/ceramic composite single-layer or multi-layer vertically stacked structures as a distinctive approach to make large-area nanoscale metamaterials. The self-organized nanocomposites provide an extensible material platform to manipulate optical response in the region of sub-5 nm scale.
个人简介：
曹鸿涛，本科和硕士毕业于东北大学，2004年博士毕业于中国科学院金属研究所。2007年3月–至今任职于中国科学院宁波材料技术与工程研究所纳米材料与功能器件事业部，研究员，获得“团队行动”项目支持。2007年进入浙江省“新世纪151人才工程”第三层次培养计划，2012年进入宁波市领军拔尖人才培养工程第二层次。目前主持的项目有国家自然科学基金四项、浙江省钱江人才计划项目、宁波市基金项目，作为骨干参与国家重点基础研究发展计划纳米专项、中科院创新团队国际合作伙伴计划项目、浙江省重点科技创新团队项目和宁波市科技创新团队项目。主持工业界合作项目四项。目前主要研究领域：新型氧化物半导体薄膜，氧化物高κ介电薄膜，氧化物半导体元器件及复杂器件，光学薄膜及组件。已在Adv. Mater., Nano Energy, Appl. Phys. Lett., Phys. Rev. B, ACS Appl. Mater. Interfaces, J. Electrochem. Soc.等国际核心刊物上发表了七十余篇SCI论文；申请和授权国家发明专利近二十项，先后指导、培养博士后、博士、硕士研究生十余名。
