关于举行湖南大学潘安练教授学术报告的通知

报告题目：低维半导体结构能带/界面调控及光子特性研究

报 告 人：潘安练 教授（湖南大学）

邀 请 人：秦安军 教授

报告时间：2018年11月26日（周一）下午15:00

报告地点：北区发光材料与器件国重 502会议室

欢迎广大师生踊跃参加。

报告摘要：

Band gap is one of the most important parameters of semiconductor materials for their photonics applications since they determine the spectral features of absorption and emission processes. Due to the limited band gaps of natural semiconductors, band gap engineering through alloying and heterostructured band gap alignments with semiconductors of different band gaps is fundamently important for realizing high performance and multifunctional semiconductor devices. In this talk, I will report our recent progress on the band gap engineering and heterostructure preparations of low dimensional semiconductor structures, based on 1D semiconductor nanowires and 2D atomically thin layered materials. Using the achieved band gap engineered semiconductor and their heterostructures, many novel nanophotonics devices have been constructed, such as wavelength continuously tuned nanolasers, nanoscale white light source, wavelength splitter, asymmetric waveguiding and high-performance photodetectors and integrated systems etc.