Quan Niu
State Key Laboratory of Luminescent Materials and Devices
South China University of Technology
e-mail: qqniu@scut.edu.cn
Background
2013-2017 Ph.D. in Chemistry
Max Planck Institute for Polymer Research, Germany
Advisor: Prof. Paul W. M. Blom
2007-2010 Master of Science in Advanced Materials
Technical University of Munich, Germany
Advisor: Prof.essor Wolfgang Brütting & Prof. Paolo Lugli
2003-2007 Bachelor of Science in Chemistry
Shandong University
Short CV
Niu Quan, distinguished professor and doctoral supervisor at the State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, and the leader of the Novel Semiconductor Materials and Device Physics research group. Prof. Niu is an awardee of the Science Fund Program for Distinguished Young Scholars of the National Natural Science Foundation of China (Overseas). In response to the significant strategic demands of display technology in China, Prof. Niu is dedicated to conducting research on the stability mechanisms and efficiency loss mechanisms of novel thin-film displays, focusing on key materials and devices for the next generation of display technologies.
Prof. Niu aims to explore the industrialization of low-cost, large-size, high-efficiency, and high-stability thin-film display technologies with independent intellectual property rights. Her primary research is in the field of optoelectronic semiconductor and device physics. The specific focus of her research includes charge transport and recombination mechanisms in organic semiconductors, as well as the study of trap effects and the nature of defects. By constructing physical models of devices, Prof. Niu has studied the intrinsic aging behavior of polymer light-emitting diodes (PLEDs), clarified the intrinsic aging mechanisms of PLEDs, proposed methodologies for direct detection of trap formation during device aging, and applied a ‘trap dilution’ strategy to effectively mitigate the aging of PLEDs. The related works have been published in prestigious journals such as Nature Materials and Physical Review Letters. Notably, her article in Physical Review Letters was selected as an ‘Editor's Suggestion’. Her research on the stability of large-area, low-cost organic light-emitting diodes (Nature Materials 2018, 17, 557-562) was reviewed by ‘Photonik’ as the foundational work for high-stability solution-processed thin-film light-emitting. Prof. Niu has been awarded 5 patents in the United States and 10 patents in China. Additionally, Prof. Niu has also been honored with titles such as National Distinguished Expert and the SID Future Star of Display Technology Young Leader.
Honors and Awards
2023 Editorial Board Member for Outstanding Young Scholars, Journal of Luminescence
2022 Selected for Guangdong Province Pearl River Recruitment Program of Talents Innovative Entrepreneurial Team Project
2021 Selected for the Central Organization Department's Overseas High-level Talent Program Youth Project
2020 SID International Information Display Society Young Leader Award, Displaying the Future
2017 Max Planck Society, Germany, Awarded Highest Distinction for Doctoral Degree
2016 Conference Award, International Conference on Synthetic Metals (ICSM)
2011 Outstanding Employee Award, Lenovo Global Research Center
2010 Highest Honors, Elite Master's Program in Bavaria, Germany
Publication
1. F. Yang, H. V. Eersel, J. Wang, *Q. Niu, P. A. Bobbert, R. Coehoorn, *F. Liu, and *G. Zhou. Dilution-induced current-density increase in disordered organic semiconductor devices: A kinetic Monte Carlo study. Physical Review Applied, 2024, 21, 014050.
2. W. Lin, J. Huang, S. Li, P. W. M. Blom, H. Feng, J. Li, X. Lin, Y. Guo, W. Liang, L. Wu, *Q. Niu, Y. Ma. Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements. Journal of Applied Physics, 2024, 135, 045701.
3. M. Liu, H. Hao, G. Liao, C. Li, K. Liu, N. Wang, *Q. Niu, X. Yin. Boron-Containing Molecules with Fluorescence-Phosphorescence Dual-Emission for Mechanochromism and Single Molecular White Light-Emitting Diodes. Advanced Optical Materials 2023, 2202918.
4. G. Liao, J. Lei, S. Li, M. Liu, Y. Qiao, K. Liu, N. Wang, *Q. Niu, X. Yin. Spiro Boron‐Nitrogen Molecules Based Thermally Activated Delayed Fluorescence Emitter for Highly Efficient Solution-Processed Organic Light-Emitting Diode. Advanced Optical Materials 2023, 2301242.
5. *Q. Niu, H. Hao, W. Lin, J. Huang, Degradation Mechanism of Organic Light-emitting Diodes. Chinese Journal of Luminescence 2023, 44, 186-197.
6. Q. Niu, G. A. H. Wetzelaer, P. W. M. Blom, N. I. Crăciun. Quantification of hole-trap concentration in degraded polymer light-emitting diodes using impedance spectroscopy. Applied Physics Letters2019, 114, 163301.
7. Q. Niu, Roland Rohloff, G. A. H. Wetzelaer, P. W. M. Blom, N. I. Crăciun. Hole trap formation in polymer light-emitting diodes under current stress. Nature Materials 2018,17, 557-562.
8. Q. Niu, N. I. Crăciun, G. A. H. Wetzelaer, P. W. M. Blom. Origin of negative capacitance in organic light-emitting diodes. Physical Review Letters 2018,120, 116602. (Highlight)
9. Q. Niu, P. W. M. Blom, F. May, P. Heimel, M. Zhang, C. Eickhoff, U. Heinemeyer, C. Lennartz and N. I. Crăciun. Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs.Journal of Applied Physics 2017,122, 185502.
10. Q. Niu, G. A. H. Wetzelaer, P. W. M. Blom, N. I. Crăciun. Modeling of Electrical Characteristics of Degraded Polymer Light-Emitting Diodes.Advanced Electronic Materials 2016, 2, 1600103.
Granted U.S. Patents
1. Q. Niu, G. Yang, J. Yang, K. Shang. Electronic device and imaging method thereof. 2018, US9942479B2.
2. Q. Niu, F. Xu, K. Shang, G. Yang. Double-sided organic light-emitting diode, and manufacturing method and display device thereof. 2016, US9312321B2.
3. Q. Niu, G. Yang, S. Fan, K. Shang. Electronic device with multiple display modes and display method of the same. 2016, US9459714B2.
4. G. Yang, K. Shang, Q. Niu. Dual-screen display and display method. 2017,US9721490B2.
5. G. Yang, Q. Zhao, K. Shang, Q. Niu. Method for determining bent state of electronic device, electronic device and flexible screen. 2017, US9829969B2.
Granted Chinese Patents __________
1.牛泉, 阳光，范溯，尚可。具有多种显示形态的电子设备及其显示方法。2018，CN103246315B。
2.牛泉，许芳，尚可，阳光。双面有机发光二极管及其制造方法、显示装置。2016，CN103165826B。
3.牛泉，阳光，户田良太，尚可。电子设备及其显示方法。2016，CN103188497B。
4.牛泉，阳光，户田良太，尚可。电子设备及其显示方法。2016，CN103246124B
5.牛泉, 阳光，杨锦平，尚可。一种电子设备及其成像方法。2015，CN103137026B。
6.阳光，牛泉，范溯。一种控制电子设备连接的方法及电子设备。2017，CN103249174B。
7.阳光，尚可，牛泉。一种双屏显示器及显示方法。2016，CN103208247B。
8.阳光，尚可，牛泉。柔性屏、确定柔性屏弯折状态的方法及电子设备。2016，CN103383951B。
9.阳光，尚可，牛泉。电子设备的处理方法、系统及电子设备。2016，CN103218105B。
10.阳光，李琦，张振华，牛泉。一种确定传感器设置位置的方法及装置。2016，CN103206967B。
