High-PerformanceStretchable Organic Field-Effect Transistor Fabricated with an Ionic-GelDielectric

Wei Shi, Song Chen*, Xueling Yan, Ziheng Lin,Zelin Liu, Lan Liu*

Abstract

Theintrinsically stretchable organic field-effect transistor (OFET) is anessential component of advanced stretchable electronics; however, the wideapplication of OFET devices still faces challenges of low stretchability andhigh power consumption. Here, the bilayer structure thermoplastic polyurethane(TPU)-[EMIM][BF₄]/TPU with high areal capacitance (1.27 μF cm^–2)was developed as a stretchable dielectric to fabricate a stretchable OFET witha low-operating voltage and a low-leakage current (<10^–6 A).Besides, the intrinsically stretchable active layer was fabricated by blendingpoly(3-hexylthiophene) withpolystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene to obtain anefficient high-performance OFET. The effects of an imidazolium-based ionic gelwith different anion sizes on dielectric layer properties were studied; theas-developed OFET exhibited a high charge-carrier mobility μ of 5.19 cm² V^–1 s^–1 and an I_on/I_off of 10⁴. Thestretchable OFET can withstand up to 50% biaxial stretching and maintainreliable electrical characteristics after stretching and release between 0 and10% strain for 1000 cycles, and μ is 3.60 cm² V^–1 s^–1and Ion/Ioff is 2.40 × 10³ when it isstretched 10% along the channel length direction. At last, we manufactured theOFET for photoelectric detection and demonstrated its imaging application.

文章链接：

https://doi.org/10.1021/acsapm.4c02597