关于举行滑铁卢大学班大雁教授学术报告的通知
报告题目：Photonic Devices for Optical Upconversion, Mid-infrared and Terahertz Lasing Emission
报 告 人：班大雁教授(加拿大滑铁卢大学电子与计算机工程系)
Prof. Dayan Ban, Department of Electrical and Computer Engineering, University of Waterloo，
时 间：2016年12月1日（星期四）上午10:00-12:00
地 点：北区发光国重实验室502会议室
报告摘要：
In this presentation, I will introduce our research efforts in past 10 years at the University of Waterloo, mainly focusing on two projects: organic/inorganic optical upconversion devices and semiconductor quantum cascade lasers. In the optical upconversion device project, we integrated an inorganic photodetector with an organic light emitting diode. The device can convert near infrared light at 1.5 mm to visible light, enabling a near approach for achieving low-cost, large area near-infrared imaging. We had demonstrated the first up-conversion optical amplifier and the first upconverison near-infrared pixelless imaging device. In the semiconductor quantum cascade laser project, we designed a series of semiconductor quantum active regions and optimized device structures to achieve record-breaking terahertz quantum cascade lasers that can lase up to 199.5 K. I will also present a new type of THz QCLs based on an indirect-pumping scheme (so called phonon-photon-phonon design), which could eventually realize room-temperature terahertz lasing emission. In the end, I will present our recent results of development of InAs/AlSb based QCLs, which demonstrate mid-infrared emission at room-temperature. If time allows, I will also briefly introduce the molecular beam epitaxy (MBE) facility and quantum-nano center nanofabrication facility at the University of Waterloo.
报告人简介
Dayan Ban is a Professor of Nanotechnology Engineering in the Department of Electrical and Computer Engineering of the University of Waterloo. He received a B.Sc. and at the University of Science and Technology of China, Hefei, China. He received a Ph.D. in Electrical and Computer Engineering from the University of Toronto, Toronto, Ontario, Canada, in 2003. During 2001-2002, he was a visiting scientist at Nortel Networks Optical Components, Ottawa, Ontario, Canada. Dr. Ban was on staff at the Institute for Microstructural Sciences of the National Research Council, Ottawa, from Sept. 2002 to Oct. 2005. He was a visiting scientist with the Research Lab of Electronics at MIT in 2009. Dr. Ban is a senior member of IEEE/LEOS and a registered Professional Engineer in Ontario. He has over 15 years experience in designing, fabricating, characterizing optoelectronic quantum and nano devices as well as in scanning probe microscopy technique. Dr. Ban has authored or coauthored over 160 papers in refereed journals and conference proceedings and has contributed a chapter to the seminal book on novel scanning probe microscopy. He holds four patents in novel optoelectronic devices.
