宁洪龙

薄膜晶体管材料与结构优化 (TFT Materials & Structure Optimization)

新型半导体材料和应用 (New Semiconductor Materials & Application)

柔性电子用高导电极材料和结构 (High-conductivity Electrodes in Flexible Electronics)

新型透明电极材料和结构 (New TCO Materials & Structure)

印刷电子用墨水材料 (Ink Materials in Printable Electronics)

薄膜器件成形和失效机理 (Thin Film Devices Forming & Failure Mechanism)

刚性和柔性基板 (Rigid & Flexible Substrate)

电子材料与封装技术 (Electronic Materials & Packaging Technology)

印刷电子器件与系统集成 (Printable Electronics Device & System Integration)

EDUCATION：

Tsinghua University                    (05/1999～12/2003) Bei Jing,     P. R. C.

Doctor       (Electronic Material & Packaging)

Central South University of Technology      (09/1996～04/1999) Chang Sha,    P. R. C.

Master       (Powder Metallurgy)

Central South University of Technology      (09/1989～07/1993) Chang Sha,    P. R. C.

Bachelor     (Metal Materials and Fabrication)

EXPERIENCE：

06/2013 ~ Present       South China University of Technology, Professor

The third group of scientific research innovation team of Guangdong province core member (organic/polymer photoelectric functional materials and applications);The fourth group of South China University of Technology outstanding talents and introduced plan team member; State Key Laboratory of Luminescent Materials and Devices core member; National Laboratory for Infrared Physics (Chinese Academy of Sciences) visiting professor, Reviewer of Journal of Materials Chemistry C, Ceramics International and so on.

Main research fields: TFT Materials & Structure, Oxide Semiconductor & Low Temperature Poly Silicon Backplane, High-conductivity Interconnection AMFPDs, New Touch Screen Panel Structure & Process, Nanometer Materials Application in Display, Thin Film Devices Forming & Failure Mechanism, Glass & Flexible Substrate in Display, Electronic Materials & Packaging Technology, Printable Display Materials & Fabrication

10/2004 ~ 05/2013      Process Development Group, Samsung Electronic (Korean), Principal Researcher

The inventor of the world's first 2μm electroless plating Cu half-buried gate bus line structure 15 inches TFT LCD, the world’s first high-thick electroless plating Cu and organic leveling material back exposing structure 15 inches TFT LCD, the world’s first carbon nanotubes pixel structure 17 inches TFT LCD; And the coworker inventor of the world’s first oxidation semi-conductivity active layer structure 15 inches TFT LCD.

Main relative research fields include metal sputter (Al, Cu, Ti, Mo, Nd, Cr and their alloys), non-sputter methods (Cu and Ni plating), and Soda-lime glass and relative TFT technologies (CVD, Wet & Dry Etching and so on), Touch scanning panel material and structure development, Carbon nanotubes transparent conductivity, Doping ITO and IZO material, High carrier mobility oxidation semi-conductivity material.

05/1999 ~ 01/2004      M. S. E. Dept. Tsinghua University       , Graduate Student

Research on Electronic Material & Packaging Technology: Main research includes photolithographic lead frame, direct bonding copper, active bracing solder, electroplating Cu, Ni, Ag and Au (including electroless plating), reliability (plastic and ceramic) and photoelectron packaging.

09/1996 ~ 04/1999   M. S. E. Dept. Central South University of Technology, Graduate Student

Research on Institute of Non-equilibrium Materials Science & Engineering: Main research includes multi-layer spray deposition (fabricating Al/Cu，Al/Steel and Cu/Steel bimetal plate)and aluminum alloy fabrication.

07/1993 ~ 08/1996      Tianjin Aluminum Alloy Plant       Section Chief of Technology

I have presided or participated as a main role in my plant to introduce Italy 5500 ton Extrusion Machine，and have taken part in electric and hydraulic pressure and programmable controller equipment installation and process technology parameter setting and debugging.