2017-05-08
浏览次数：2060Name: Rongsheng Chen
Introduction:
Rongsheng Chen received the B.S. degree in electronic science and technology and the M.S. degree in microelectronics and solid state electronics from South China University of Technology, Guangzhou, China, in 2005 and 2008, respectively. He received his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong, in 2013. From 2013 to 2016, He was a Postdoctoral Research Associate at the State Key Lab on Advanced Display and Optoelectronics Technology in the Hong Kong University of Science and Technology. In 2016, he joined the School of Electronic and Information Engineering, South China University of Technology as an Associate Professor.
Photograph：
Contact：
Email: chenrs@scut.edu.cn,
Tel: +86-20-87110449
Mobile:+8613828081820
Address: Room 534, 30th Building,
School of Electronic and Information Engineering,
South China University of Technology (SCUT),
Guangzhou, China, 510640.
Education Experience：
2008.9-2013.5 Ph.D., Hong Kong University of Science and Technology
2005.9-2008.7 Mphil, South China University of Technology
2001.9-2005.7B.S., South China University of Technology
Research Interest：
His current research interests include poly-Si, metal oxide and novel compound thin film transistors, and their application in active matrix displays.
Recent Projects:
“The sputtering deposition of InSnZnO thin film and its application to vertical thin film transistors” National Natural Science Foundation ,61604057, 250k，2017.1-2019.12, PI
Achievement :
South China University of Technology, Young Scholar Award, 2017
Books:
1.“Active-Matrix Organic Light-Emitting Display Technologies”, Shuming Chen, Jianning Yu, Yibin Jiang, Rongsheng Chen, Tsz Kin Ho, Bentham Science Publisher, ISBN:978-1-68108-121-2 (2015).
Journal Papers
1.Sunbin Deng, Rongsheng Chen*, Wei Zhou, Jacob Yeuk Lung Ho, Man Wong,and Hoi-Sing Kwok，“Fabrication of High-Performance Bridged-Grain Polycrystalline Silicon TFTs by Laser Interference Lithography,” IEEE Trans.Electron Devices, 63(3), pp. 1085-1090, Mar 2016.
2.Sunbin Deng, Rongsheng Chen*, Guijun Li, Zhihe Xia, Meng Zhang, Wei Zhou, Man Wong, and Hoi-Sing Kwok，High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels,”Appl. Phys. Lett. 109, 182105, Oct 2016.
3.Meng Zhang,Zhihe Xia,Wei Zhou, Rongsheng Chen*, Man Wong, and Hoi-Sing Kwok, “Dynamic-Gate-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors,” IEEE Transaction on Electron Devices, 63(10), pp.3964-3970, Oct 2016.
4.R. Chen, W. Zhou, M. Zhang, M. Wong, and H. S. Kwok, “High Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere,” IEEE Electron Device Lett. 36(5), pp. 460-462, May 2015.
5.R. Chen, W. Zhou, M. Zhang, and H. S. Kwok, “Self-Aligned Indium-Gallium-Zinc Oxide Thin-Film Transistors with SiNx/SiO2/SiNx/SiO2 Passivation Layers,” Thin Solid Films, 564, pp. 397-400, Aug 2014.
6.R. Chen, W. Zhou, M. Zhang, M. Wong and H. S. Kwok, “Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric,” Thin Solid Films, 548, pp. 572-575, Dec 2013.
7.R. Chen, W. Zhou, M. Zhang, and H. S. Kwok, “Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer,” IEEE Electron Device Lett. 34(4), pp.517-519, Apr 2013.
8.R. Chen, W. Zhou, M. Zhang, M. Wong, and H. S. Kwok, “Self-Aligned Indium-Gallium-Zinc Oxide Thin-Film Transistor with Source/Drain Regions Doped by Implanted Arsenic,” IEEE Electron Device Lett. 34(1), pp.60-62, Jan 2013.
9.R. Chen, W. Zhou, M. Zhang, and H. S. Kwok, “Top-Gate GaN Thin-Film Transistors Based on AlN/GaNHeterostructures,” IEEE Electron Device Lett. 33(9), pp. 1282-1284, Sep 2012.
10.R. Chen, W. Zhou, M. Zhang, M. Wong, and H. S. Kwok, “Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor with Phosphorus-Doped Source/Drain Regions,” IEEE Electron Device Lett. 33(8), pp. 1150-1152, Aug 2012.
11.R. Chen, W. Zhou, M. Zhang, and H. S. Kwok, “High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric,” Thin Solid Films, 520(21), pp. 6681-6683, Aug 2012.
12.R. Chen, W. Zhou, and H. S. Kwok, “Top-gate thin-film transistors based on GaN channel layer,” Appl. Phys. Lett. 100, p. 022111, Jan 2012.
13.R. Chen, X. Zheng, W. Deng, and Z. Wu, “A Physics-Based Analytical Solution to the Surface Potential of Polysilicon Thin Film Transistors using the Lambert W Function,”Solid-State Electronics 51(6), pp.975-981, Jun 2007.
Patents:
·H. S. Kwok, M. Wong, R. Chen, W. Zhou, and M. Zhang, “Metal-Induced Crystallization of Amorphous Silicon in an Oxidizing Atmosphere,” US Patent, No. 2016/0020095 A1, 2016.