Yurong Liu

Name: Yurong Liu

Introduction:Yurong Liuis a Professor with the School of Electronic and Information Engineering, South China University of Technology. He received the B.S. degree in Semiconductor Physics from Jiangxi University, Nanchang, China, in 1991, the MSc degree in condensed physics from the Sichuan University, Chengdu, China, in 1996, and the Ph.D. degrees in Microelectronics and Solid State Electronics from South China University of Technology, Guangzhou, China, in 2007. He visited Hong Kong University for short-term researches in 2003, 2008, and 2015, respectively. His current research interests include thin film transistors and microsensors.

Photograph：

Contact：
Email:  phlyr@scut.edu.cn,
Mobile:+86-13435686978

Address:  Room 536A, 30^th Building,

School of Electronic and Information Engineering,
 South China University of Technology (SCUT),
 Guangzhou, China, 510640.

Education Experience：

2004.9-2006.6 Ph.D.,Microelectronics and Solid State Electronics, South China University of Technology.

1993.9-1996.7MSc,Condensed Physics, Sichuan University.

1987.9-1991.7 B.S.,Semiconductor Physics, Jiangxi University (now named Nanchang University).

Research Interest：

His research interests include inorganic/organic thin-film transistors, capacitive micromachined ultrasonic transducers (CMUTs) and microsensors for detecting gases, heat, and light.

Recent Projects:

1)Stability and mechanism of polymer thin film transistors, National Natural Science Foundation of China, Grant No.61076113.

2)Fabrication and properties of resistive gate oxide thin film transistors, Natural Science Foundation of Guangdong province,Grant No.2016A030313474.

Achievement:He has published more than 60 papers in journals includingIEEE Electron Device Letters,IEEE Transactions on device and materials reliability, Thin Solid Films, Semiconductor Science & Technology, etc., and7 patents.

Books:

[1]. Wenxiu Feng,Yurong Liu, Pushneg Chen, Fundamentals of semiconductor physics, National Defence Industry Press, 2005.

Journal Papers:

1.Yu-Rong Liu, Gao-Wei Zhao, Pai-To Lai, et al., Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor,Chin. Phys. B, 25(8): 088503, 2016.

2.Yuan Liu,Yurong Liu, Yujuan He, et al.,Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology,Journal of Semiconductors,37(6):064012, 2016.

3.Liu Yu-Rong, Su Jing, Lai Pei-Tao,et al.,Positive Gate-Bias Temperature Instability of ZnO Thin-Film Transistor,Chinese Physics B, 23(6): 06850, 2014.

4.Yurong Liu,Shufeng Mo,Ruohe Yao,Pui To Lai,Negative gate-bias instability of ZnO thin-film transistors studied by current-voltage and capacitance-voltage analyses,Journal of Vacuum Science & Technology B, 32 (6): 061208, 2014.

5.Yuan Liu, Wei-Jing Wu,Yu-Rong Liu, et al., Yun-Fei En, and Bin Li,Instability of Indium Zinc Oxide Thin-Film Transistors Under Transmission Line Pulsed Stress,IEEE Electron Device Letters, 35(12): 1254-1256, 2014.

6.Y. R. Liu, R. Liao, P. T. Lai, and R. H. Yao, Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene), IEEE Transactions on device and materials reliability, 12 (1): 58-62, 2012.

7.Yurong Liu, P T Lai, Ruohe Yao, et al., Interface states in polymer thin-film transistors based on poly(3-hexylthiophene),Semicond. Sci. Technol.,27 (5):055015, 2012.

8.Liu Yu-Rong, Lai Pei-Tao, and Yao Ruo-He, High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene),Chin. Phys. B, 21(8): 088503-1-6, Aug., 2012.

9.L. F. Deng,Y. R. Liu, P. T. Lai, et al., Improved Performance of Pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation,IEEE Transactions on device and materials reliability, 12 ( 2):520-528. June, 2012.

10.L. F. Deng, P. T. Lai,Y. R. Liu, et al., Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric,IEEE Electron Device Letters, 32,(1): 93-95, 2011.

11.Y. R. Liu, P. T. Lai, R. H. Yao, et al., Influence of Octadecyltrichlorosilane Surface Modification on Electrical Properties of Polymer Thin-Film Transistors Studied by Capacitance–Voltage Analysis,IEEE Transactions on device and materials reliability, 11(1):60-65, 2011.

12.Y. R. Liu, L. F. Deng, R. H. Yao, et al., Low-Operating-Voltage Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium Oxide as the Gate Dielectric,IEEE Transactions on device and materials reliability, 10(2): 233-237, 2010.

13.Yurong Liu, Liming Wu, P T Lai, et al., Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors,Semicond. Sci. Technol.,24 (9): 095013, 2009.

14.Y.R. Liu, J.B. Peng, P.T. Lai, Photo-response of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene),Thin Solid Films, 516(12): 4295-4300, 2008.

15.Yurong Liu, Junbiao Peng, P.T. Lai, et al., Degradation characteristics and light-induced effects of polymer thin-film transistors,Thin Solid Films,515(11):4808-4811,2007.

16.Yurong Liu, Junbiao Peng, P. T. Lai,Modelling the threshold voltage shift ofpolymer thin-film transistors underconstant and variable gate-bias stresses,Semicond. Sci. Technol.,22(3):259-262, 2007.

17.Yurong Liu, Junbiao Peng,P.T. Lai,Stability of polymer thin-film transistors based onpoly(2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene),Applied Surface science, 253 (17): 6987-6991, 2007.

Patents:

[1].Yurong Liu, Ruohe Yao, Kuiwei Geng, A Integrated capacitive micromachined ultrasonic transducer andIts Implement Method, CN201510278817.X, 2016.10.05.

[2].Yurong Liu, Ruohe Yao, Kuiwei Geng, Gang Wei,AResistive gate thin film transistor, CN201521089303.1, 2016-06-22.

[3].Yurong Liu, Rong Liao, Ruohe Yao, A Planar separated double gate thin film transistor, CN201521083246.6, 2016-08-10.

[4]. Dandan Zhang,Yurong Liu,Ruohe Yao, Gang Wei, A Flexible capacitive micromachined ultrasonic transducer, CN201521019289.8, 2016-05-04.

[5]. Gaowei Zhao,Yurong Liu,Rong Liao, A dual active layer CuO2/SnO P-channel thin film transistor, CN201521080901.2, 2016-06-22.

[6].Yurong Liu, Ruohe Yao, Gang Wei, A Flexible integrated ultrasonic transducer structure andIts Implement Method, CN201010204614.3, 2013.01.16.

[7].Yurong Liu, Ruohe Yao, Gang Wei, A Flexible integrated ultrasonic transducer, 201020231298.4, 2011.04.20.