2017-05-08
浏览次数：2215Name: Ruohe Yao
Introduction: Ruohe Yao is a Professor with the School of Electronic and Information Engineering, South China University of Technology. He was previously a Professor with the Department of Physics and the Dean of the School of Sciences, Shantou University, Shantou, China. Since 2002, he has been a Professor and the Vice-Dean of the School of Physics, SCUT. From 2008 to 2012, he has been the Vice-Dean of the School of Electronic and Information Engineering, SCUT.
Contact：
Email: phrhyao@scut.edu.cn,
Tel: +8602087110449
Address: Room 536, 30th Building,
School of Electronic and Information Engineering,
South China University of Technology (SCUT),
Guangzhou, China, 510640.
Research Interest：microelectronics techniques, IC Design, digital signal processing, semiconductor device
Recent Projects:
1、Modeling and parameter extraction of the oxide semiconductor thin-film transistors. National Natural Science Foundation of China, Grant No. 61274085.
2、Development and industrialization of GaN based RF devices. Science and Technology Research Projects of Guangdong Province, Grant No. 2016B010123004.
3、Research on key technology of broadband & high efficiency LED devices for visible light communication. Science and Technology Research Projects of Guangdong Province, Grant No. 2014B010119002.
Achievement: Excellent teachers in Guangdong Province.
Journal Papers:
1、Zhetong Liang, Weijian Liu, Ruohe Yao, Contrast Enhancement by Nonlinear Diffusion Filtering, IEEE Trans. Image Process. IEEE Trans. Image Process. 2016, 25(2): 673-686
2、Xu Minghe, Bian Zhenpeng, Yao Ruohe, Fast Sign Detection Algorithm for the RNS Moduli Set {2(n+1)-1, 2(n)-1, 2(n)}. IEEE Trans.VLSI. 2015, 23(2): 379-383
3、Qiang L;Yao RH. A New Definition of the Threshold Voltage for Amorphous InGaZnO Thin-Film Transistors. IEEE Trans. Electron Devices. 2014,61(7):2394-2397
4、JW Chen, RH Yao. Efficient Modulo 2n+1 Multipliers, IEEE Trans. VLSI, 2011,19(12):2149-2157
5、Zhong Chun-Liang, Yao, Ruo-He, Geng, Kui-Wei. An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions. IEEE Trans. Electron Devices. 2014,61(2):394-399
6、Wu,W.J., Yao,R.H. et.al. An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution, IEEE Trans. Electron Devices. 2011, 58(9): 3230-3235
7、Lihao ZHONG, Ruohe YAO, Fei LUO，Pseudo-CMOS with Re-Pull-Down Transistor: A Low
Power Inverter Design for Thin-Film Transistor, IEICE Trans. Electron. 2016, 99(6):727-729
8、Zhe HUANG, Ruohe YAO, Fei LUO, Trigger Circuit of Hardware Trojan Based on Up/Down Counter, IEICE Trans. Electron. 2015, 98(3):279-282
9、Zhenpeng BIAN, Ruohe YAO, Fei LUO, Soft-start Circuit Based on Switched-capacitor for DC-DC Switching Regulator. IEICE Trans. Electron. 2012, 95(10): 1692-1694
10、Ming He Xu, Ruo He Yao, Fei. Luo. An Low-Complexity Sign Detection Algorithm for RNS {2n-1,2n,2n+1}. IEICE Trans. Electron. 2012, 95(9):1552-1556
11、Z.P. Bian, R.H. Yao, F. Luo. Low-Voltage Class-AB CMOS Output Stage with Tunable Quiescent Current. IEICE Trans. Electron. 2010, 93(5):1375-1376
12、Xu Piaorong,Yao Ruohe, A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors,EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2015,72(3): 30102-1-4
13、Bian, Zhen-Peng; Yao, Ruo-He, Process, voltage and temperature compensation in a 1-MHz 130nm CMOS monolithic clock oscillator with 2.3% accuracy, INTERNATIONAL JOURNAL OF ELECTRONICS 2015, 102(10):1652-1663
14、Qiang L;Yao RH. A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors. JOURNAL OF DISPLAY TECHNOLOGY, 2015, 11(4): 325-329
15、Qiang, L.;Yao, RH. A new drain current model for amorphous IGZO thin film transistors. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2015,70(1): 10101-1-4
16、Jian Qin; Yao, R.H. A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distribution. Solid-State Electronics. 2014, 95: 46-51
17、Qiang L;Yao RH. Analysis of temperature effect on a-Si:H thin film transistors. SOLID-STATE ELECTRONICS, 2013, 81: 13-18
18、Shen, Yi，Yao, Ruohe，Improvement of the Conductivity of Silver Nanowire Film by Adding Silver Nano-Particles. CHINESE PHYSICS LETTERS. 2016, 33(3): 037801
19、Qin Jian;Yao Ruohe, Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution, Journal of Semiconductors, 2015, 36(12) :124005-1-8
20、Qiang Lei, Yao Ruohe, A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors，CHINESE PHYSICS LETTERS, 2012, 29(9): 097301-1-4
21、Xu Jiaxiong, Yao Ruohe, Liao Rong, Improved photovoltaic properties of a-Si/beta-FeSi2/c-Si double heterojunction by Al-doping，PHYSICA B-CONDENSED MATTER, 2012, 407(4): 756-758
22、CHEN JianWen,YAO RuoHe, Efficient CRT-based residue-to-binary converter forthe arbitrary moduli set. SCIENCE CHINA-INFORMATION SCIENCES.2011,54(1): 70-78
23、JiaxiongXua,,Ruohe Yao, Yurong Liu. Growth of a-FeSi2 thin film on textured silicon substrate for solar cell application. Applied Surface Science , 2011-9, 257 (23):10168– 10171
24、Jiaxiong Xu, RuoheYao, KuiweiGeng. Photovoltaic characteristics of a-Si/b-FeSi2/c-Si double heterojunctionfabricated by magnetron sputtering. J. Vac. Sci. Technol. A. 2011, 29(5): 051202-1-4
25、Jiaxiong Xu, Ruohe Yao.Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 bymagnetron sputtering. Thin Solid Films 520 (2011) 515–518
26、XU Jia-Xiong, YAO Ruo-He, LIU Yu-Rong, Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature. CHIN. PHYS. LETT. Vol. 28, No. 10 (2011) 107304-1-3
27、C. L. Zhong, R. H. Yao and K.W.Geng. Characterization of interface states in a-Si H/c-Si heterojunctions by an expression of the theoretical diffusion capacitance. J. Phys. D: Appl. Phys. (2010), 43:495102-1-6
28、JW Chen, RH Yao. Efficient Modulo 2n+1 Multipliers for Diminished-1 Representation. IET Circuits Devices Syst. 2010, 4(4): 291-300
Patents:
1.Thin film transistor pressure sensor based on organic elastomer gate insulation layer. CN201521077671.4
2.Public bicycle management system based on NFC.CN201520580459.3
3.A capacitance type MEMS sensor detection circuit. CN201520576705.8
4.LED controller based on wireless mouse. CN201420105657.X
5.LED control method and controller based on wireless mouse. CN201410084967.2
6.A copper zinc tin sulfur/selenium ink and the preparation method. CN201310691608.9
7.Super resolution processing method for color video. CN201310438358.8
8.A high gain amplifier circuit. CN200910193446.X
9.High gain amplifier. CN200920238140.7
10.A preparation method of the thin film solar cell. CN200310117412.5
11.Laminated thin film solar cell. CN200320119299.X
12.High resolution quadrupole mass spectrometer. CN02250723.X