交换偏置效应在现代磁存储技术中至关重要。面向器件小型化与多功能集成，实现室温以上、可调的全二维交换偏置成为关键挑战。近日，我们联合ETH丁石磊博士、华南师范大学侯志鹏教授、中山大学侯仰龙教授及北京大学杨金波、罗昭初教授团队，首次在全范德瓦尔斯反铁磁/铁磁异质结（Fe0.56Co0.44)5GeTe2（FCGT）/Fe3GaTe2（FGaT）中实现了室温可重构的垂直交换偏置。研究发现，该效应可由预设场直接诱导，无需传统场冷工艺，阻塞温度达300 K。通过外场调控FCGT的Néel序，可精准操控交换偏置场的符号与强度：强预设场诱导Néel矢量翻转，促使界面磁矩对齐，从而产生稳固的交换偏置状态。该机制揭示了Néel序调控在二维磁界面工程中的核心作用，为开发新型低维自旋电子器件提供了新见解。

  Exchangebias (EB) effect is crucial in modern magnetic storage technology. With deviceminiaturization and multifunctional integration, achieving tunable all-van derWaals exchange bias above room temperature is challenging. Recently, incollaboration with Dr. Shilei Ding (ETH), Prof. Zhipeng Hou (South China NormalUniversity), Prof. Yanglong Hou (Sun Yat-sen University), and Profs. Jinbo Yang& Zhaochu Luo (Peking University), we realized reconfigurable perpendicularexchange bias at room temperature in a van der Waalsantiferromagnet/ferromagnet heterostructure: (Fe0.56Co0.44)5GeTe2（FCGT）/Fe3GaTe2（FGaT）. Our study shows that EB effect in this system is directly inducedby a preset field without traditional field-cooling process, with a blockingtemperature of 300 K. By tuning Néelorder of FCGT via external magnetic field, the sign and magnitude of the EBfield are precisely controlled: A strong pre-set field induces a switch in theNéelorder of FCGT, which aligns the interfacial magnetization at the FCGT/FGaTinterface, leading to robust EB. This mechanism reveals the key role of Néel-order regulation in two-dimensional magnetic interfaceengineering, offering new insights for low-dimensional spintronic devices.

图1 全二维异质结FCGT/FGaT中室温可重构的交换偏置

  相关成果已经发表于《纳米》（ACS nano 2025 ），论文第一作者为22级博士研究生王继承。论文链接：https://pubs.acs.org/doi/10.1021/acsnano.5c08572