报告题目：The Kinetics of 2D Materials Growth and the Routes Towards the Synthesis of their Wafer-scale Crystals

报告人：丁峰 教授（韩国蔚山科学技术大学）

主持人：杨中民 教授

报告时间：2019年10月21日（星期一）上午10：30

报告地点：物理楼（18号楼）二楼213室学术报告厅

欢迎广大师生参加!

                                        物理与光电学院

2019年10月18日

报告摘要：

To achieve the industrial synthesis of various 2D materials in large area and high quality, understanding the kinetics of their growth is of crucial importance.With various theoretical approaches, our studies have revealed a few key characteristics of 2D materials growth:

(i)    the growth and etching of an edge of a 2D material is reversible and the rate of the growth or etching is determined by the structure of the edge,

(ii)   The shape of a 2D materials during growth or etching is determined by its symmetry, the interaction with the substrate and can be precisely described by the kinetic Wullf construction,

(iii)  Besides 2D single crystals, the experimentally synthesized 2D polycrystals can be predicted by theoretical analysis.

(iv)  By considering the structures of various edges of a 2D materials, our theoretical calculation can precisely predict the environment dependent edge structure and the shape evolution during a 2D material’s growth and etching,

(v)   Our theoretical study has revealed that the synthesis of single crystalline 2D materials in large area could be achieved by selecting proper substrates.

报告人简介：

Prof. Feng Ding obtained his Bs, Ms and PhD degrees from Huazhong University of Science and Technology, Fudan University and Nanjing University in 1993, 1996 and 2002, respectively. From 2009-2016, he worked in the Institute of Textile and Clothing of Hong Kong Polytechnic University as an Assistant Professor and Associate Professor (from 2013). From the beginning of 2017, he joined UNIST as a Distinguished Professor and the IBS-CMCM as a group leader. 

Prof. Ding’s research group’s research interests mainly focus on the computational method development, theoretical exploration of various carbon materials and 2D materials. Prof. Ding coauthored more than 200 SCI papers in leading journals of natural science, and these publications were cited by > 11,000 times (Google Scholar) and his personal h-index is 58.