题目：斯格明子霍尔效应对拓扑自旋结构动力学的影响
时间：2026年2月9日16：00-17：00
地点：国际校区B1-c101
主讲人：李晓光
Title: The Influence of the Skyrmion Hall Effect on the Dynamics of Topological Spin Textures
Date: February 9th（Mondey）16：00-17：00
Location: B1-c101
Speaker: Li Xiaoguang
主讲人简介：
李晓光，深圳技术大学工程物理学院副教授，深圳市鹏城孔雀人才。2018年毕业于太原理工大学，后于香港中文大学（深圳）从事博士后研究工作，于2021年加入深圳技术大学。2025年公派赴瑞典查尔莫斯理工大学访问。主要研究领域为磁性系统的微磁学建模，以及纳米磁性结构，包括磁畴壁、磁泡、磁涡旋、磁性拓扑结构的静动态特性仿真与理论分析。主持国家自然科学基金青年项目，广东省自然科学基金项目，广东省基础与应用基础基金项目等项目6项，获2023年度广东省自然科学二等奖。在Nature Communications、NPJ Computational Materials、Physical Review B、Applied Physics Letters等期刊发表论文20余篇，授权自旋电子器件相关美国专利1项，中国专利10余项。英国物理学会受信审稿人（trusted reviewer），Journal of Physics-Condensed Matter，Journal of Physics D-Applied Physics审稿人。
讲座内容：
磁性斯格明子是一种受拓扑保护的涡旋磁结构。受自身拓扑性质影响，磁性斯格明子在运动的过程中会在马格努斯力的作用下产生与激励方向垂直的偏移，即斯格明子霍尔效应。该效应是拓扑自旋结构实现器件化应用的主要障碍之一。
斯格明环由两个拓扑荷相反的斯格明子嵌套构成。由于正负拓扑荷相互抵消，该环状结构不受斯格明子霍尔效应的影响，因此具有更为优越的动力学性质。我们结合实验与微磁学模拟，通过准确控制铁磁薄膜磁序的激发和弛豫过程，观测到了斯格明子和斯格明环之间转换的动态过程，以及关键性证据：涌现的斯格明子霍尔效应。除此之外，我们还将结合近期的工作，介绍斯格明子霍尔效应对畴壁双半子等新型拓扑自旋结构动力学的具体影响，探讨控制、利用斯格明子霍尔效应加速动力学过程的可行方法，以及潜在的自旋电子器件设计方案。
Short Bios：
Li Xiaoguang is an Associate Professor at the College of Engineering Physics, Shenzhen Technology University, and a recipient of the Shenzhen Pengcheng Peacock Talent Plan. He graduated from Taiyuan University of Technology in 2018 and subsequently conducted postdoctoral research at the Chinese University of Hong Kong (Shenzhen) before joining Shenzhen Technology University in 2021. In 2025, he was sponsored by the government for a visiting scholarship at the University of Gothenburg in Sweden. His primary research interests include micromagnetic modeling of magnetic systems, as well as the simulation and theoretical analysis of statics and dynamics of nanoscale spin structures—including magnetic domain walls, skyrmions, vortices, and other topological magnetic textures. Professor Li has served as the principal investigator for six major research projects, including projects funded by the National Natural Science Foundation of China (NSFC) Young Scientists Fund, the Guangdong Provincial Natural Science Foundation, and the Guangdong Basic and Applied Basic Research Foundation. In 2023, he was awarded the Second Prize of the Guangdong Provincial Natural Science Award. He has published over 20 papers in prestigious journals such as Nature Communications, NPJ Computational Materials, Physical Review B, and Applied Physics Letters. Additionally, he holds one U.S. patent and over ten Chinese patents related to spintronic devices. He is an IOP (Institute of Physics) Trusted Reviewer and serves as a peer reviewer for Journal of Physics: Condensed Matter and Journal of Physics D: Applied Physics.
Abstract：
Magnetic skyrmions are a class of topologically protected, vortex-like magnetic structures. Influenced by their inherent topological properties, skyrmions experience a deflection perpendicular to the direction of driving force during motion—mediated by the Magnus force—a phenomenon known as the Skyrmion Hall effect (SkHE). This effect represents one of the primary obstacles to the practical application of topological spin structures in electronic devices.
A skyrmionium (or skyrmion ring) is composed of two nested skyrmions with opposite topological charges. Since the positive and negative topological charges cancel each other, this ring-like structure is immune to the Skyrmion Hall effect, endowing it with superior dynamical properties. By combining experimental methods with micromagnetic simulations and precisely controlling the excitation and relaxation processes of magnetic order in ferromagnetic thin films, we observed the dynamic transition between skyrmions and skyrmioniums. We also identified critical evidence: the emergent Skyrmion Hall effect. In addition, drawing on our recent research, we will introduce the specific impacts of the Skyrmion Hall effect on the dynamics of novel topological spin structures, such as domain wall bimerons. We will discuss feasible methods for controlling and leveraging the Skyrmion Hall effect to improve their mobility, alongside potential design schemes for spintronic devices.