题目：拓扑自旋电子学
时间：2026年2月9日15：00-16：00
地点：国际校区B1-c101
主讲人：周艳
Title: Topological Spintronics
Date: February 9th（Mondey）15：00-16：00
Location: B1c-101
Speaker: Zhou Yan
简介：
周艳，2003年毕业于中国科学技术大学（本科），2009年博士毕业于瑞典皇家工学院。2015年入选国家特聘青年专家，2016年起任职香港中文大学（深圳）副教授，2022年起任职香港中文大学（深圳）教授。团队以第一或通讯者发表JCR Q1论文100余篇，引用18500余次，H 因子为63。周艳教授长期担任Review of Modern Physics, Nature，Nature Materials, Nature Physics、Nature Nanotechnology、PRL等杂志审稿人。曾多次获邀在美国材料学会、美国物理学会、中国物理学会做邀请报告，亦受邀为国家自然科学基金委、法国国家研究署、德国科学基金会、欧盟基金、深圳科创委评审项目。
讲座内容：
拓扑自旋电子学作为当前自旋电子学领域的重要发展方向，聚焦于各类拓扑磁结构在信息存储与处理中的应用。以磁斯格明子为代表的拓扑磁结构，凭借其纳米尺度、拓扑稳定性和低能耗驱动等优势，被认为是新一代高密度、低功耗信息器件的理想载体。随着研究的不断深入，未来自旋电子器件有望在单一平台上融合多种不同的拓扑磁结构，实现更高效、复杂的信息处理功能。本报告将介绍拓扑自旋电子学的基础概念、主要研究进展及其在信息存储和逻辑运算等领域的应用前景，重点探讨在单一器件中实现不同拓扑磁结构间可控转换的关键技术。提出基于自旋拓扑结构的赛道存储器、逻辑电路、微波源器件、拓扑类脑计算、基于自旋拓扑结构的量子计算等重要概念，这些领域已经成为研究热点。相关研究不仅推动了拓扑自旋电子学的发展，也为实现更高效的信息技术奠定了基础。
Short Bios：
Zhou Yan received his bachelor's degree from the University of Science and Technology of China in 2003 and her Ph.D. from the Royal Institute of Technology in Sweden in 2009. He was selected as a National Specially Appointed Young Expert in 2015. Since 2016, he has served as Associate Professor at The Chinese University of Hong Kong, Shenzhen, and was promoted to Professor at the same institution in 2022. His team has published over 100 JCR Q1 papers as first or corresponding author, garnering more than 18,500 citations with an H-index of 63. Professor Zhou Yan has served as a long-term reviewer for journals including Review of Modern Physics, Nature, Nature Materials, Nature Physics, Nature Nanotechnology, and Physical Review Letters. He has been invited multiple times to deliver presentations at the American Materials Society, American Physical Society, and Chinese Physical Society. Additionally, He has been invited to review projects for the National Natural Science Foundation of China, the French National Research Agency, the German Research Foundation, the European Union, and the Shenzhen Science and Technology Innovation Commission.
Abstract：
Topological spintronics, as a key development direction in contemporary spintronics, focuses on the application of various topological magnetic structures in information storage and processing. Topological magnetic structures, exemplified by magnetic skyrmions, are considered ideal carriers for next-generation high-density, low-power information devices due to their nanoscale dimensions, topological stability, and low-energy-drive advantages. As research advances, future spintronic devices hold promise for integrating multiple distinct topological magnetic structures onto a single platform, enabling more efficient and complex information processing functions. This report introduces the fundamental concepts of topological spintronics, major research progress, and its application prospects in information storage and logic operations, with a focus on exploring key technologies for achieving controlled transitions between different topological magnetic structures within a single device. It proposes important concepts such as track-based memory, logic circuits, microwave source devices, topological brain-inspired computing, and quantum computing based on spin-topological structures. These fields have become research hotspots. Related studies not only advance topological spintronics but also lay the foundation for achieving more efficient information technologies.