基本信息
职称：微电子学院教授、博导、硕导
头衔：广东省引进高层次人才计划-青年拔尖人才
Title: Professor, Doctoral & Graduate Supervisor, School of Microelectronics
Honor: Guangdong Talent Program-Outstanding Young Talent
招生专业
个人简介
陈荣盛，电气和电子工程师协会IEEE 高级会员。研究方向为：柔性集成电路、柔性电子器件及其集成、薄膜晶体管TFT、AMOLED新型显示等。华南理工大学兴华学者人才计划青年学者。主要业绩: 发表学术论文60多篇，其中SCI期刊论文40多篇；编写英文专著1章；多次在国际会议上作特邀报告，申请/授权美国发明专利3项、国内发明专利10多项；担任IEEE TED, IEEE EDL, APL，JEDS等多个国际期刊审稿人。主持/参与国家自然科学基金、广东省科技计划项目、广州市科技计划项目、香港创新科技署、企业横向课题等科研项目多项。
Chen Rongsheng, Senior member, IEEE. Research interest: flexible integrated circuits, flexible electronic devices and their integration, thin film transistor, novel AMOLED display. Main achievements: He has published more than 60 academic papers, including more than 40 SCI journal papers; contributed to 3 US patents and more than 10 Chinese patents on thin film transistor and TFT IC. Served as a reviewer for international journals such as IEEE TED, IEEE EDL, APL, JEDS, etc. Research projects including the National Natural Science Foundation of China, Guangdong Science and Technology Project, Guangzhou Science and Technology Project, Hong Kong Innovation and Technology Commission.
教育经历
2008-9至2013-5, 香港科技大学, 博士
2005-9至2008-7, 华南理工大学, 硕士
2001-9至2005-7, 华南理工大学, 学士
工作经历
2020-9至今, 华南理工大学, 教授
2016-6至2020-8, 华南理工大学, 副教授
2013-5至2016-5, 香港科技大学, 博士后
研究方向
生物电信号采集处理芯片、柔性电子器件及其集成、薄膜晶体管、光伏器件
授课课程
《半导体器件》、《微电子工艺及器件仿真》、《薄膜晶体管与显示技术》
学术任职
IEEE高级会员Senior Member
广东省智能传感器与专用集成电路工程技术研究中心副主任
担任IEEE TED, IEEE EDL, APL，JEDS等多个国际期刊审稿人
科研项目
1. 国家自然科学基金委员会，青年项目，InSnZnO薄膜的磁控溅射法制备及其在垂直型薄膜晶体管上的应用，2017-01至2019-12，主持
2. 广东省基础与应用基础研究基金，区域联合基金-重点项目，超轻量赋形高效太阳能电池技术研究，2020-10至2023-09，主持
3.广东省基础与应用基础研究基金，面上项目，柔性顶栅型InSnZnO薄膜晶体管关键技术研究，2019-10至2022-09，主持
4. 广东省科技厅，重点领域研究计划，高端通用芯片设计关键技术与产品研发，2019-03至2021-12， 主持（校方）
5. 广东省科技厅，粤港联合创新项目，面向下一代AMOLED显示的EMMO结构金属氧化物薄膜晶体管的研究，2018-08至2020-07，主持
6. 广东省科技厅，工业高新技术领域，应用于新型显示的高性能InSnZnO 薄膜晶体管的关键技术研究，2017-01至2018-12，主持
7. 广州市科技创新委员会，对外科技合作项目，应用于高分辨率AMOLED显示的InSnZnO薄膜晶体管及其有源阵列研究，2018-04至2020-03，主持
代表性科研成果
[1] S. Deng, W. Zhong, S.C. Dong, R. Chen, G. Li, M. Zhang, F. S. Y. Yeung, M. Wong, and H. S. Kwok, “Thermal budget reduction in metal oxide thin-film transistors via planarization process,” IEEE Electron Device Lett., 42(2), pp. 180-183, 2021.
[2] Y. Xu, Bin Li, W. Zhong, S. Deng, H. Fan, Z. Wu, L. Lu, F. Yueng, H. S. Kwok, R. Chen, “A Unipolar TFT-Based Amplifier with Enhanced DC Offset Suppression,” Electronics Letters, 57(2): 67-70, 2021.
[3] Y. Xu, B. Li, S. Deng, Y. Qin, H. Fan, W. Zhong, Y. Liu, Z. Wu, F. S. Y. Yeung, M. Wong, H. S. K., and R. Chen, “A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs, IEEE Transistor on Circuits and systems-II: Express Briefs, Vol. 67(11), pp. 2367-2371, 2020.
[4] H. Fan, G. Li, S. Deng, Y. Xu, Y. Qin, Y. Liu, F. S. Y. Yeung, M. Wong, H. S. Kwok and R. Chen, “A high gain low-noise amplifier based on ITO-stabilized ZnO thin-film transistors,” IEEE Trans. Electron Devices, 67(12), pp. 5537-5543, 2020.
[5] W. Zhong, R. Yao, Y. Liu, L. Lan, and R. Chen, Effect of self-assembled monolayers (SAMs) as surface passivation on the flexible a-InSnZnO thin-film transistors, IEEE Trans. on Electron Devices, 67(8), pp. 3157-3162, 2020.
[6] X. Yin, S. Deng, G. Li, W. Zhong, R. Chen, G. Li, F. S. Y. Yeung M. Wong, and H. S. Kwok, Low leakage current vertical thin-film transistors with InSnO-stabilized ZnO channel, IEEE Electron Device Lett., 41(2), pp. 248-251, 2020.
[7] W. Zhong, R. Yao, Z. Chen, L. Lan, R. Chen, Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor, IEEE Access, vol. 8, pp. 101834-101839, 2020.
[8] J. Zhang, B. Ren, S. Deng, J. Huang, L. Jiang, D. Zhou, X. Zhang, M. Zhang, R. Chen, F. Yeung, H.‐S. Kwok, P. Xu, G. Li, Voltage‐Dependent Multicolor Electroluminescent Device Based on Halide Perovskite and Chalcogenide Q‐Dots Emitters, Advanced Functional Materials 30 (4), 1907074, 2020.
[9] S. Deng, R. Chen, G. Li, M. Zhang, F. S. Y. Yeung M. Wong, and H. S. Kwok, “Gate insulator engineering in top-gated indium-tin-oxide-stabilized ZnO thin-film transistors”, IEEE Electron Device Lett., 40(7), pp. 1104-1107, 2019.
[10] Y. Qin, G. Li, Y. Xu, R. Chen, S. Deng, W. Zhong, Z. Wu, B. Li, G. Li, F. S. Y. Yeung, M. Wong, and H. S. Kwok, “Low-power design for unipolar ITO-Stabilized ZnO TFT RFID code generator using differential logic decoder”, IEEE Trans. on Electron Devices, 66(11), pp. 4768-4773, 2019.
[11] Y. Liu, H. He, Y. Y. Chen, R. Chen, L. Wang, S. Cai, X. Xiong, “Temperature-dependent low-frequency noise in indium–zinc–oxide thin-film transistors down to 10 K,” IEEE Trans. Electron Devices, 66(5), 2192-2197, May 2019.
[12] R. Chen, L. Lan, “Solution-processed metal-oxide thin-film transistors: a review of recent developments”, Nanotechnology, vol. 30, 312001, 2019.
[13] S. Weng, R. Chen, W. Zhong, S. Deng, G. Li, F. S. Y. Yeung, L. Lan, Z. Chen, and H. S. Kwok, “High Performance Amorphous Zinc Tin Oxide Thin Film Transistors with Low Tin Concentration”, IEEE Journal of the Electron Devices Society, vol. 7, no.1, pp. 632-637, 2019.
[14] Y. Liu, ST Cai, CY Han, YY Chen, L Wang, XM Xiong, R. Chen, “Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors” IEEE Journal of the Electron Devices Society, vol. 7, no.1, pp. 203-209, 2019.
[15] S. Deng, R. Chen, G. Li, Z. Xia, M. Zhang, W. Zhou, M. Wong, and H. S. Kwok, “Threshold voltage adjustment in hybrid-microstructural ITO-stabilized ZnO TFTs via gate electrode engineering,” IEEE Electron Device Lett., 39(7), pp. 975-978, 2018.
[16] W. Zhong, G. Li, L. Lan, B. Li, and R. Chen, “InSnZnO thin-film transistors with vapor-phase self-assembled monolayer as passivation layer,” IEEE Electron Device Lett., 39(11), pp.1680-1683, 2018
[17] Y. Xu, S. Deng, Z. Wu, B. Li, Y. Qin, W. Zhong, R. Chen, G. Li, M. Wong, and H. S. Kwok, “The implementation of fundamental digital circuits with ITO-stabilized ZnO TFTs for transparent electronics,” IEEE Trans. Electron Devices, 65(12), 5395-5399,2018.
[18] Y. Liu, S. Deng, R. Chen, B. Li, Y.-F. En, Y.-Q. Chen, “Low frequency noise in the hybrid-phase microstructural ITO-stabilized ZnO thin film transistors,” IEEE Electron Device Lett., 39(2), pp.200-203, 2018.
[19] Y. Liu, R. Chen, B. Li, Y.-F. En, Y.-Q. Chen, “Analysis of indium-zinc-oxide thin-film transistors under electrostatic discharge stress,” IEEE Trans. Electron Devices, 65(1), pp.356-360, 2018
[20] Wei Zhong, Guoyuan Li, Linfeng Lan, Bin Li, and Rongsheng Chen, Effects of Annealing Temperature on Properties of InSnZnO Thin Film Transistors Prepared by Co-sputtering, RSC Advances, 8, 34817-34822, 2018.
发明专利
(1) Chen Rongsheng; Deng Sunbin; Kwok Hoi Sing; Top-gate self-aligned indium-tin-zinc oxide thin film transistor and manufacturing method therefore, 2017-10-19, 美国, US 2020/0258916 A1.
(2) Chen Rongsheng; Deng Sunbin; Kwok Hoi Sing; Inorganic metallic oxide thin film with composite crystal form and manufacturing method thereof, 2017-11-8, 美国, US 2020/0350167 A1.
(3) Kwok Hoi Sing; Wong Man; Chen Rongsheng; Zhang Meng; Zhou Wei; Metal-In duced Crystallization of Amorphous Silicon in an Oxidizing Atmosphere, 2016-1-21, 美国, US 2016/0020095 A1.
(4) Zhang Liangfen; Lien Shuichih; Lo Changcheng; Wu Yuanchun; Hsu Yuanjun; Kwok Hoi-Sing; Wong Ma; Chen Rongsheng; Zhou Wei; Zhang Meng; Manufacture method of polysilicon thin film and polysilicon TFT structure, 2017-7-6, 美国, US 2017/0194151 A1.
(5) 陈荣盛; 邓孙斌; 郭海成; 一种自对准顶栅铟锡锌氧化物薄膜晶体管及其制造方法, 2019-10-11, 中国, ZL201710792095.9.
(6) 陈荣盛; 钟伟; 邓孙斌; 李国元; 吴朝晖; 李斌; 一种二硫化钼薄膜的制备方法, 2019-1-18, 中国, ZL201910049361.8.
(7) 陈荣盛; 钟伟; 邓孙斌; 尹雪梅; 李国元; 一种金属氧化物薄膜晶体管及其钝化层的制备方法, 2018-11-23, 中国, CN201811405391.X.
(8) 陈荣盛; 邓孙斌; 郭海成; 具有复合晶型的无机金属氧化物薄膜晶体管及其制造方法, 2017-10-24, 中国, CN201711000066.0.
(9) 陈荣盛; 范厚波; 李国元; 徐煜明; 覃俣宁; 吴朝晖; 李斌; 一种基于薄膜晶体管的自举结构放大器及芯片, 2019-4-24, 中国, CN201910331863.X.
(10) 陈荣盛; 康良云; 钟伟; 金属氧化物薄膜晶体管及其制备方法和钝化层的制备方法, 2019-7-11, 中国, CN201910623144.5.